Organic semiconductor

About: Organic semiconductor is a research topic. Over the lifetime, 15905 publications have been published within this topic receiving 533881 citations.

Order on disorder: Copper phthalocyanine thin films on technical substrates

Abstract: We have studied the molecular orientation of the commonly used organic semiconductor copper phthalocyanine (CuPC) grown as thin films on the technically relevant substrates indium tin oxide, oxidized Si, and polycrystalline gold using polarization-dependent x-ray absorption spectroscopy, and compare the results with those obtained from single crystalline substrates [Au(110) and GeS(001)]. Surprisingly, the 20–50 nm thick CuPC films on the technical substrates are as highly ordered as on the single crystals. Importantly, however, the molecular orientation in the two cases is radically different: the CuPC molecules stand on the technical substrates and lie on the single crystalline substrates. The reasons for this and its consequences for our understanding of the behavior of CuPC films in devices are discussed.

Large spin diffusion length in an amorphous organic semiconductor.

Abstract: We directly measured a spin diffusion length (� s) of 13.3 nm in amorphous organic semiconductor (OS) rubrene (C42H28) by spin polarized tunneling. In comparison, no spin-conserved transport has been reported in amorphous Si or Ge. Absence of dangling bond defects can explain the spin transport behavior in amorphous OS. Furthermore, when rubrene barriers were grown on a seed layer, the elastic tunneling characteristics were greatly enhanced. Based on our findings, � s in single-crystalline rubrene can be expected to reach even millimeters, showing the potential for organic spintronics development.

A dopant free linear acene derivative as a hole transport material for perovskite pigmented solar cells

Abstract: A solution processable, molecular organic semiconductor, 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene), was employed as hole transport material (HTM) in mesoscopic methylammonium lead iodide perovskite solar cells. TIPS-pentacene is potentially cost effective, exhibits a relatively high hole mobility and has a favourable HOMO level with respect to the valence band of perovskite. The photovoltaic performance of perovskite solar cells with TIPS-pentacene as HTM in its pristine form and with a dopant/additive was investigated and compared with classical spiro-OMeTAD based devices. Through solvoneering (solvent engineering) and concentration optimization TIPS-pentacene in its pristine form gave a very competitive power conversion efficiency (PCE) of 11.8% under 1 sun conditions. The open circuit voltage of 0.92 V and a short circuit current density of 20.86 mA cm−2 for the devices with pristine TIPS-pentacene were higher compared to doped spiro-OMeTAD based devices under similar conditions, thus paving the use of TIPS-pentacene as an alternative to an expensive spiro-OMeTAD for large area integration in perovskite based solar cells.

High-performance solution-processable N-shaped organic semiconducting materials with stabilized crystal phase.

Abstract: N-shaped organic semiconductors are synthesized via four steps from a readily available starting material. Such semiconductors exhibit preferable ionization potential for p-type operation, thermally stable crystalline phase over 200 °C, and high carrier mobility up to 16 cm(2) V(-1) s(-1) (12.1 cm(2) V(-1) s(-1) on average) with small threshold voltages in solution-crystallized field-effect transistors.

25th Anniversary Article: Charge Transport and Recombination in Polymer Light-Emitting Diodes

Abstract: This article reviews the basic physical processes of charge transport and recombination in organic semiconductors. As a workhorse, LEDs based on a single layer of poly(p-phenylene vinylene) (PPV) derivatives are used. The hole transport in these PPV derivatives is governed by trap-free space-charge-limited conduction, with the mobility depending on the electric field and charge-carrier density. These dependencies are generally described in the framework of hopping transport in a Gaussian density of states distribution. The electron transport on the other hand is orders of magnitude lower than the hole transport. The reason is that electron transport is hindered by the presence of a universal electron trap, located at 3.6 eV below vacuum with a typical density of ca. 3 × 10¹⁷ cm⁻³. The trapped electrons recombine with free holes via a non-radiative trap-assisted recombination process, which is a competing loss process with respect to the emissive bimolecular Langevin recombination. The trap-assisted recombination in disordered organic semiconductors is governed by the diffusion of the free carrier (hole) towards the trapped carrier (electron), similar to the Langevin recombination of free carriers where both carriers are mobile. As a result, with the charge-carrier mobilities and amount of trapping centers known from charge-transport measurements, the radiative recombination as well as loss processes in disordered organic semiconductors can be fully predicted. Evidently, future work should focus on the identification and removing of electron traps. This will not only eliminate the non-radiative trap-assisted recombination, but, in addition, will shift the recombination zone towards the center of the device, leading to an efficiency improvement of more than a factor of two in single-layer polymer LEDs.