Topic
Organic semiconductor
About: Organic semiconductor is a research topic. Over the lifetime, 15905 publications have been published within this topic receiving 533881 citations.
Papers published on a yearly basis
Papers
More filters
150 citations
TL;DR: In this article, a promising metal oxide-doped hole transporting layer (HTL) of rhenium oxide (ReO3)-doped N,N′-diphenyl-N, N′-bis (1,1′-biphensyl)-4,4′-Diamine (NPB) was reported, which achieved a driving voltage of 5.2-5.4V and power efficiency of 2.3lm∕W at 20mA
Abstract: The authors report a promising metal oxide-doped hole transporting layer (HTL) of rhenium oxide (ReO3)-doped N,N′-diphenyl-N,N′-bis (1,1′-biphenyl)-4,4′-diamine (NPB). The tris(8-hydroxyquinoline) aluminum-based organic light-emitting diodes with ReO3-doped NPB HTL exhibit driving voltage of 5.2–5.4V and power efficiency of 2.2–2.3lm∕W at 20mA∕cm2, which is significantly improved compared to those (7.1V and 2.0lm∕W, respectively) obtained from the devices with undoped NPB. Furthermore, the device with ReO3-doped NPB layer reveals the prolonged lifetime than that with undoped NPB. Details of ReO3 doping effects are described based on the UV-Vis absorption spectra and characteristics of hole-only devices.
150 citations
TL;DR: A facile, general, and effective method to grow 2DCOS up to centimeter size which can be transferred to any substrate efficiently and demonstrated by nine organic semiconductors with different molecular structures.
Abstract: Two-dimensional (2D) crystals of organic semiconductors (2DCOS) have attracted attention for large-area and low-cost flexible optoelectronics. However, growing large 2DCOS in controllable ways and transferring them onto technologically important substrates, remain key challenges. Herein we report a facile, general, and effective method to grow 2DCOS up to centimeter size which can be transferred to any substrate efficiently. The method named "solution epitaxy" involves two steps. The first is to self-assemble micrometer-sized 2DCOS on water surface. The second is epitaxial growth of them into millimeter or centimeter sized 2DCOS with thickness of several molecular layers. The general applicability of this method for the growth of 2DCOS is demonstrated by nine organic semiconductors with different molecular structures. Organic field-effect transistors (OFETs) based on the 2DCOS demonstrated high performance, confirming the high quality of the 2DCOS.
150 citations
TL;DR: In this article, an empirical guideline for designing hole transport materials (HTMs) that suppress rises in driving voltage even with a few hundred nanometer thick film in the organic light emitting diodes (OLEDs).
Abstract: In this study, the authors show an empirical guideline for designing hole transport materials (HTMs) that suppress rises in driving voltage even with a few hundred nanometer thick film in the organic light emitting diodes (OLEDs). In a device structure of indium tin oxide (110nm)/hole transport layer (HTL) (Xnm)∕4,4′-N,N′-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl (10nm)/tris-(8-hydroxyquinoline)aluminum (Alq3) (50nm)∕MgAg (100nm)∕Ag (10nm), the authors compared electroluminescence characteristics of the OLEDs having a thin-film HTL (X=50nm) and a thick-film HTL (X=300nm) using 13 kinds of HTMs. They observed a closed correlation between suppression of the driving voltage and the HTMs’ thermal characteristics. Highly thermally stable HTMs resulted in a small increase in the driving voltage.
150 citations
TL;DR: In this article, the authors reported ambipolar organic field-effect transistors based on rubrene single crystals, which operate in both the p-and n-channel regimes depending upon the bias conditions.
Abstract: We herein report ambipolar organic field-effect transistors based on rubrene single crystals. The transistors operate in both the p- and n-channel regimes depending upon the bias conditions. Hole and electron mobilities of 1.8 and 1.1×10−2cm2∕Vs, respectively, were derived from saturated currents. The appearance of an electron enhancement mode in single crystals of wide-band-gap semiconductors (∼2.6eV) is ascribed to the reduction of electron traps at the semiconductor-dielectric interface using a hydroxyl-free gate dielectric.
150 citations