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Organic semiconductor

About: Organic semiconductor is a research topic. Over the lifetime, 15905 publications have been published within this topic receiving 533881 citations.


Papers
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Patent
Hubert Spreitzer1, Heinrich Becker1, Kevin Treacher1, Susanne Heun1, Andreas Sauer1 
07 Mar 2002
TL;DR: In this article, the authors describe solutions and/or dispersions of organic semiconductors in a mixture of at least two different organic solvents, characterised in that each solvent has a boiling point of less than 200 °C and a melting point of 15 °C or less.
Abstract: The invention relates to solutions and/or dispersions of organic semiconductors in a mixture of at least two different organic solvents, characterised in that A) each solvent has a boiling point of less than 200 °C and a melting point of 15 °C or less, B) at least one of the solvents has a boiling point of between more than 140 °C and less than 200 °C, C) the solvents used have no benzylic CH2 or CH groups, D) the solvents used are not benzene derivatives containing tert-butyl substituents or more than two methyl substituents. The invention also relates to the use of such solutions and/or dispersions in printing methods for producing layers of organic semiconductors, especially for the electronics industry.

147 citations

Journal ArticleDOI
TL;DR: This tutorial reviewsummarizes the method of weak epitaxy growth (WEG) and its application in the fabrication of high quality organic semiconductor thin films and provides a way to produce organic superlattices.
Abstract: The fabrication of organic semiconductor thin films is extremely important in organic electronic devices. This tutorial review—which should particularly appeal to chemists and physicists interested in organic thin-film growth, organic electronic devices and organic semiconductor materials—summarizes the method of weak epitaxy growth (WEG) and its application in the fabrication of high quality organic semiconductor thin films. WEG achieves the thin-film fabrication of disk-like organic semiconductor molecules with highly structural order, molecular level smoothness and large size domains on amorphous substrate. The organic field-effect transistor devices based on these thin films exhibit a high charge mobility that is comparable with their corresponding single-crystal devices. Moreover, it provides a way to produce organic superlattices.

147 citations

Journal ArticleDOI
TL;DR: In this paper, the authors focus on the approaches to the synthesis of functional polymers for optoelectronic applications that make use of radical polymerization with reversible addition-fragmentation chain transfer (RAFT) polymerization.

147 citations

Patent
21 Oct 2004
TL;DR: In this article, the authors proposed a more soluble and easier to synthesize materials for organic light-emitting diodes than the comparative materials in accordance with the prior art.
Abstract: The present invention relates to organic semiconductors which contain structural units L=X and in addition structural units which emit light from the triplet state. The materials according to the invention are more soluble and easier to synthesise and are therefore more suitable for use in organic light-emitting diodes than comparative materials in accordance with the prior art.

146 citations

Journal ArticleDOI
TL;DR: This work shows that it can control the spin polarization of extracted charge carriers from an OSC by the inclusion of a thin interfacial layer of polar material, allowing full control of the spin band appropriate for charge-carrier extraction.
Abstract: Spintronics has shown a remarkable and rapid development, for example from the initial discovery of giant magnetoresistance in spin valves to their ubiquity in hard-disk read heads in a relatively short time. However, the ability to fully harness electron spin as another degree of freedom in semiconductor devices has been slower to take off. One future avenue that may expand the spintronic technology base is to take advantage of the flexibility intrinsic to organic semiconductors (OSCs), where it is possible to engineer and control their electronic properties and tailor them to obtain new device concepts. Here we show that we can control the spin polarization of extracted charge carriers from an OSC by the inclusion of a thin interfacial layer of polar material. The electric dipole moment brought about by this layer shifts the OSC highest occupied molecular orbital with respect to the Fermi energy of the ferromagnetic contact. This approach allows us full control of the spin band appropriate for charge-carrier extraction, opening up new spintronic device concepts for future exploitation.

146 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023258
2022558
2021580
2020697
2019701
2018713