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Organic semiconductor
About: Organic semiconductor is a research topic. Over the lifetime, 15905 publications have been published within this topic receiving 533881 citations.
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TL;DR: In this paper, the authors compared the capacitance of the SiO2 and the electrolyte-gated field effect transistors on rubrene single crystals by experimentally estimating their accumulated charges.
Abstract: Comparative studies of electrolyte-gated and SiO2-gated field-effect transistors have been carried out on rubrene single crystals by experimentally estimating their accumulated charges. The capacitance of the electrolyte gate at 1mHz was 15μF∕cm2, which is more than two orders of magnitude larger than that of the 100-nm-thick SiO2 gate dielectric. The maximum carrier density in the electrolyte gate was 0.33hole∕molecule, which is considerably larger than that in the SiO2 gate. Furthermore, the transfer characteristics of the electrolyte-gate field-effect transistor showed reversible-peak behavior at an accumulated carrier density of 0.23hole∕molecule.
132 citations
TL;DR: An approach that utilizes an organic heterointerface to improve the crystallinity and control the morphology of an organic thin film and opens a new way for the fabrication of nanostructured semiconducting layers towards high-performance organic electronics.
Abstract: High-performance organic electronics require minimal grain boundaries in an organic semiconductor active layer. Here, Kang et al. report the growth of pentacene thin films in a macroporous structure with improved crystallinity, which is guided by a chemically heterogeneous, rubber-like substrate.
132 citations
TL;DR: In this paper, a transition between two different energy level alignment regimes has been observed: namely vacuum level alignment and Fermi level pinning, which is associated with spontaneous positive charge transfer across the interface to the organic semiconductors above a certain material-specific threshold value of ϕ s.
132 citations
TL;DR: A surface treatment method has been developed for the SiO2∕Si substrate to control the electrical properties of pentacene thin-film transistors (TFTs).
Abstract: A surface treatment method has been developed for the SiO2∕Si substrate to control the electrical properties of pentacene thin-film transistors (TFTs). The surface treatment is performed by spin-coating 1,1,1,3,3,3-hexamethyldisilazane liquid, resulting in a drastic improvement of the off current although the surface treatment never shows a pronounced morphological change in the pentacene channel in comparison with the one on the nontreated substrate. The off current improvement directly enhances the transistor performance especially in the TFTs with a few monolayers channel thickness. The off current suppression could be caused by the reduction of the interfacial floating charge trapped at the pentacene∕SiO2 interface.
132 citations
TL;DR: A defect generation phenomenon that is new to organic semiconductors that can be created by bias-stress and persists at room temperature for an hour in the dark but only seconds with 420 nm illumination is described.
Abstract: We describe a defect generation phenomenon that is new to organic semiconductors. A defect in pentacene single crystals can be created by bias-stress and persists at room temperature for an hour in the dark but only seconds with 420 nm illumination. The defect gives rise to a hole trap at Ev+0.38 eV and causes metastable transport effects at room temperature. Creation and decay rates of the hole trap have a 0.67 eV activation energy with a small (10(8) s(-1)) prefactor, suggesting that atomic motion plays a key role in the generation and quenching process.
132 citations