Organic semiconductor

About: Organic semiconductor is a research topic. Over the lifetime, 15905 publications have been published within this topic receiving 533881 citations.

A flexible full‐color AMOLED display driven by OTFTs

Abstract: — Organic thin-film-transistor (OTFT) technologies have been developed to achieve a flexible backplane for driving full-color organic light-emitting diodes (OLEDs) with a resolution of 80 ppi. The full-color pixel structure can be attained by using a combination of top-emission OLEDs and fine-patterned OTFTs. The fine-patterned OTFTs are integrated by utilizing an organic semiconductor (OSC) separator, which is an insulating wall structure made of an organic insulator. Organic insulators are actively used for the OTFT integration, as well as for the separator, in order to enhance the mechanical flexibility of the OTFT backplane. By using these technologies, active-matrix OLED (AMOLED) displays can be driven by the developed OTFT backplane even when they are mechanically flexed.

Air-stable and high-mobility n-channel organic transistors based on small-molecule/polymer semiconducting blends.

Abstract: Use of a carefully designed small-molecule organic semiconductor based on an oxidized diketopyrrolopyrrole core enables the fabrication by solution processing of electron-transporting (n-channel) blend-based organic thin-film transistors with high electron mobility (05 cm(2)/Vs) and high operating stability even when the devices are exposed to ambient air for prolonged periods of time

Organic Thin Film Transistors Based on Cyclohexyl-Substituted Organic Semiconductors

Abstract: Various cyclohexyl end-capped oligomeric semiconductors based on oligothiophene, oligothiophene-fluorene, and perylene diimide have been synthesized using Stille and Suzuki coupling. These materials exhibit increased solubility over their unsubstituted and hexyl-substituted counterparts and have been successfully employed as the active component in organic field-effect transistors. The morphology of vacuum-deposited films made with these oligomers has been investigated using atomic force microscopy (AFM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). Field effect mobility as high as 0.17 cm2/V·s was observed in fluorene-thiophene oligomers deposited at elevated substrate temperatures. With the series of materials, a correlation between the size of the endgroup with respect to the size of the inner semiconducting core of the molecule is found to be an important factor in orienting the molecules with their long axis perpendicular to the substrate surface in the thin film phase, and di...

Organic light-emitting device

Abstract: An organic light-emitting device cutting off ambient light while keeping emission intensity includes a pair of first and second electrodes opposed to each other; and a plurality of organic semiconductor layers layered and disposed between the first and second electrodes, wherein the organic semiconductor layers include an organic light-emitting layer, the organic semiconductor device further comprising a light-scattering layer layered and disposed between the organic light-emitting layer and at least one of the first and second electrodes The light-scattering layer includes: organic materials having carrier injection and transport characteristics of transporting electrons and/or holes; and plural particles dispersed among the organic materials so that light emitted from the organic light-emitting layer is passed therethrough

Contact doping and ultrathin gate dielectrics for nanoscale organic thin-film transistors

Abstract: Organic thin-fi lm transistors (TFTs) are of interest for electronic applications on fl exible plastic substrates, such as rollable or foldable active-matrix displays, [ 1 ] conformable sensor arrays, [ 2 ] and fl exible identifi cation tags. [ 3 ] Due to the relatively small intrinsic fi eld-effect mobility in most conjugated organic semiconductors ( 10 MHz) are highly desirable. Such high frequencies are indeed feasible, provided the lateral dimensions of the organic TFTs are suffi ciently small (about 100 nm). However, TFTs with such small lateral dimensions will suffer from a variety of detrimental short-channel effects, unless a number of important scaling requirements are observed in the design and fabrication of the transistors. Here we report on the successful fabrication and detailed analysis of organic TFTs with channel lengths and gate overlaps of about 100 nm in which the short-channel effects are greatly suppressed by area-selective contact doping (using a strong organic dopant) and by aggressive gate-dielectric scaling (using a 5.7 nm-thick, low-temperature-processed gate insulator based on a molecular self-assembled monolayer). As a result, these nanoscale organic TFTs have off-state drain currents below 1 pA, on/ off current ratios near 10 7 , as well as clean linear and saturation characteristics. The transconductance of these transistors reaches 0.4 S m − 1 , which is the largest transconductance reported for organic TFTs with patterned gate electrodes. The gate electrodes and source/drain contacts of organic TFTs are usually defi ned by photolithography, [ 1 , 3 , 4 ]