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Organic semiconductor

About: Organic semiconductor is a research topic. Over the lifetime, 15905 publications have been published within this topic receiving 533881 citations.


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Journal ArticleDOI
TL;DR: In this article, a modification of indium tin oxide (ITO) electrode interface for improved hole injection in organic light emitting diodes (OLED) was investigated, and the injection efficiency measurements were carried out to characterize contact between ITO and the organic semiconductor triphenyldiamine (TDP) layer.
Abstract: Modification of indium tin oxide (ITO) electrode interface for improved hole injection in organic light emitting diodes (OLED) was investigated The injection efficiency measurements were carried out to characterize contact between ITO and the organic semiconductor triphenyldiamine (TDP) layer Coating of ITO with self-assembled ultrathin platinum (Pt) films as interface modification layers, dramatically enhances OLED efficiency and contact with TDP becomes nearly ohmic The surface morphology of ITO electrodes was investigated by atomic force microscopy (AFM)

120 citations

Journal ArticleDOI
TL;DR: In this article, it was shown that introducing tunable nanopores (50-700 nm) to organic semiconductor thin films enhances their reactivity with volatile organic compounds by up to an order of magnitude, while the surface-area-to-volume ratio is almost unchanged.
Abstract: Porous materials are ubiquitous in nature and have found a wide range of applications because of their unique absorption, optical, mechanical, and catalytic properties. Large surface-area-to-volume ratio is deemed a key factor contributing to their catalytic properties. Here, it is shown that introducing tunable nanopores (50–700 nm) to organic semiconductor thin films enhances their reactivity with volatile organic compounds by up to an order of magnitude, while the surface-area-to-volume ratio is almost unchanged. Mechanistic investigations show that nanopores grant direct access to the highly reactive sites otherwise buried in the conductive channel of the transistor. The high reactivity of nanoporous organic field-effect transistors leads to unprecedented ultrasensitive, ultrafast, selective chemical sensing below the 1 ppb level on a hundred millisecond time scale, enabling a wide range of health and environmental applications. Flexible sensor chip for monitoring breath ammonia is further demonstrated; this is a potential biomarker for chronic kidney disease.

120 citations

Journal ArticleDOI
19 Sep 2018-Joule
TL;DR: In this paper, the use of an N-heterocyclic hydrophobic ionic liquid, 1-butyl-3-methylpyridinium bis(trifluoromethylsulfonyl)imide (BMPyTFSI), to induce dual functionality: as p-type dopant and as additive for state-of-the-art Spiro-OMeTAD hole-transporting material (HTM).

120 citations

Journal ArticleDOI
TL;DR: In this paper, an electron-selective titanium dioxide (TiO2) heterojunction contact to silicon is used to block minority carrier holes in the silicon from recombining at the cathode contact of a silicon-based photovoltaic device.
Abstract: In this work, we use an electron-selective titanium dioxide (TiO2) heterojunction contact to silicon to block minority carrier holes in the silicon from recombining at the cathode contact of a silicon-based photovoltaic device. We present four pieces of evidence demonstrating the beneficial effect of adding the TiO2 hole-blocking layer: reduced dark current, increased open circuit voltage (VOC), increased quantum efficiency at longer wavelengths, and increased stored minority carrier charge under forward bias. The importance of a low rate of recombination of minority carriers at the Si/TiO2 interface for effective blocking of minority carriers is quantitatively described. The anode is made of a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) heterojunction to silicon which forms a hole selective contact, so that the entire device is made at a maximum temperature of 100 °C, with no doping gradients or junctions in the silicon. A low rate of recombination of minority carriers at the Si/TiO2 interface is crucial for effective blocking of minority carriers. Such a pair of complementary carrier-selective heterojunctions offers a path towards high-efficiency silicon solar cells using relatively simple and near-room temperature fabrication techniques.

119 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023258
2022558
2021580
2020697
2019701
2018713