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Organic semiconductor

About: Organic semiconductor is a research topic. Over the lifetime, 15905 publications have been published within this topic receiving 533881 citations.


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Journal ArticleDOI
TL;DR: An approach--termed fluid-enhanced crystal engineering (FLUENCE)--that allows for a high degree of morphological control of solution-printed thin films and may find use in the fabrication of high-performance, large-area printed electronics.
Abstract: Solution coating of organic semiconductors offers great potential for achieving low-cost manufacturing of large-area and flexible electronics. However, the rapid coating speed needed for industrial-scale production poses challenges to the control of thin-film morphology. Here, we report an approach—termed fluid-enhanced crystal engineering (FLUENCE)—that allows for a high degree of morphological control of solution-printed thin films. We designed a micropillar-patterned printing blade to induce recirculation in the ink for enhancing crystal growth, and engineered the curvature of the ink meniscus to control crystal nucleation. Using FLUENCE, we demonstrate the fast coating and patterning of millimetre-wide, centimetre-long, highly aligned single-crystalline organic semiconductor thin films. In particular, we fabricated thin films of 6,13-bis(triisopropylsilylethynyl) pentacene having non-equilibrium single-crystalline domains and an unprecedented average and maximum mobilities of 8.1±1.2 cm2 V−1 s−1 and 11 cm2 V−1 s−1. FLUENCE of organic semiconductors with non-equilibrium single-crystalline domains may find use in the fabrication of high-performance, large-area printed electronics. Solution printing of organic semiconductors could in principle be scaled to industrial needs, yet attaining aligned single-crystals directly with this method has been challenging. By using a micropillar-patterned printing blade designed to enhance the control of crystal nucleation and growth, thin films of macroscopic, highly aligned single crystals of organic semiconductors can now be fabricated.

876 citations

Journal ArticleDOI
TL;DR: A universal energy-alignment trend is observed for a set of transition-metal oxides--representing a broad diversity in electronic properties--with several organic semiconductors, demonstrating that, despite the variance in their electronic properties, oxide energy alignment is governed by one driving force: electron-chemical-potential equilibration.
Abstract: Transition-metal oxides improve power conversion efficiencies in organic photovoltaics and are used as low-resistance contacts in organic light-emitting diodes and organic thin-film transistors. What makes metal oxides useful in these technologies is the fact that their chemical and electronic properties can be tuned to enable charge exchange with a wide variety of organic molecules. Although it is known that charge exchange relies on the alignment of donor and acceptor energy levels, the mechanism for level alignment remains under debate. Here, we conclusively establish the principle of energy alignment between oxides and molecules. We observe a universal energy-alignment trend for a set of transition-metal oxides--representing a broad diversity in electronic properties--with several organic semiconductors. The trend demonstrates that, despite the variance in their electronic properties, oxide energy alignment is governed by one driving force: electron-chemical-potential equilibration. Using a combination of simple thermodynamics, electrostatics and Fermi statistics we derive a mathematical relation that describes the alignment.

865 citations

Journal ArticleDOI
TL;DR: In this paper, a non-volatile memory device with flexible plastic active layers deposited from solution is presented, and the memory device is a ferroelectric field effect transistor (FeFET) made with a Ferroelectric fluoropolymer and a bisalkoxy-substituted poly(pphenylene vinylene) semiconductor material.
Abstract: We demonstrate a rewritable, non-volatile memory device with flexible plastic active layers deposited from solution. The memory device is a ferroelectric field-effect transistor (FeFET) made with a ferroelectric fluoropolymer and a bisalkoxy-substituted poly(p-phenylene vinylene) semiconductor material. The on- and off-state drain currents differ by several orders of magnitude, and have a long retention time, a high programming cycle endurance and short programming time. The remanent semiconductor surface charge density in the on-state has a high value of 18 mC m−2, which explains the large on/off ratio. Application of a moderate gate field raises the surface charge to 26 mC m−2, which is of a magnitude that is very difficult to obtain with conventional FETs because they are limited by dielectric breakdown of the gate insulator. In this way, the present ferroelectric–semiconductor interface extends the attainable field-effect band bending in organic semiconductors.

862 citations

Journal ArticleDOI
TL;DR: This Account reviews the synthetic methods that have been most useful for preparing a range of semiconductors, including thiophene-based oligomers, several kinds of fused rings, and polymers, and the tradeoff between process efficiency and target purity is emphasized.
Abstract: An essential aspect of the development of organic-based electronics is the synthetic chemistry devised for the preparation of the semiconductor materials responsible for the activity of organic field-effect transistors. Access to organic semiconductors in sufficient purity and variety has led to breakthroughs in solid-state physics and circuit realization. In this Account, we review the synthetic methods that have been most useful for preparing a range of semiconductors, including thiophene-based oligomers, several kinds of fused rings, and polymers. The tradeoff between process efficiency and target purity is emphasized.

860 citations

Journal ArticleDOI
TL;DR: Recent advances and future prospects of light-emitting field-effect transistors are explored, with particular emphasis on organic semiconductors and the role played by the material properties, device features and the active layer structure in determining the device performances.
Abstract: Field-effect transistors are emerging as useful device structures for efficient light generation from a variety of materials, including inorganic semiconductors, carbon nanotubes and organic thin films. In particular, organic light-emitting field-effect transistors are a new class of electro-optical devices that could provide a novel architecture to address open questions concerning charge-carrier recombination and light emission in organic materials. These devices have potential applications in optical communication systems, advanced display technology, solid-state lighting and electrically pumped organic lasers. Here, recent advances and future prospects of light-emitting field-effect transistors are explored, with particular emphasis on organic semiconductors and the role played by the material properties, device features and the active layer structure in determining the device performances.

858 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023258
2022558
2021580
2020697
2019701
2018713