Topic
Oxide
About: Oxide is a research topic. Over the lifetime, 213484 publications have been published within this topic receiving 3628747 citations. The topic is also known as: Oxide compound.
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2,750 citations
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Abstract: Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memory and could lead to novel forms of computing. However, progress has been delayed by difficulties in understanding and controlling the coupled electronic and ionic phenomena that dominate the behaviour of nanoscale oxide devices. An analytic theory of the ‘memristor’ (memory-resistor) was first developed from fundamental symmetry arguments in 1971, and we recently showed that memristor behaviour can naturally explain such coupled electron–ion dynamics. Here we provide experimental evidence to support this general model of memristive electrical switching in oxide systems. We have built micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching. We demonstrate that switching involves changes to the electronic barrier at the Pt/TiO2 interface due to the drift of positively charged oxygen vacancies under an applied electric field. Vacancy drift towards the interface creates conducting channels that shunt, or short-circuit, the electronic barrier to switch ON. The drift of vacancies away from the interface annilihilates such channels, recovering the electronic barrier to switch OFF. Using this model we have built TiO2 crosspoints with engineered oxygen vacancy profiles that predictively control the switching polarity and conductance. Nanoscale metal/oxide/metal devices that are capable of fast non-volatile switching have been built from platinum and titanium dioxide. The devices could have applications in ultrahigh density memory cells and novel forms of computing.
2,744 citations
TL;DR: In this paper, a new high-Tc oxide superconductor of the BiSrCa-Cu-O system without any rare earth element was discovered, which has Tc of about 105 K, higher than that of YBa2Cu3O7 by more than 10 K.
Abstract: We have discovered a new high-Tc oxide superconductor of the Bi-Sr-Ca-Cu-O system without any rare earth element. The oxide BiSrCaCu2Ox has Tc of about 105 K, higher than that of YBa2Cu3O7 by more than 10 K. In this oxide, the coexistence of Sr and Ca is necessary to obtain high Tc.
2,698 citations
TL;DR: In this article, a template-less and surfactant-free aqueous method is proposed to generate metal oxide thin films with controlled complexity. But the synthesis involves a templateless and a surfactent-free approach, which enables the generation of, at large-scale, low-cost, and moderate temperatures, advanced metal oxide particle-to-particle thin films.
Abstract: A novel approach to the rational fabrication of smart and functional metal oxide particulate thin films and coatings is demonstrated on the growth of ZnO nanowires and oriented nanorod arrays The synthesis involves a template-less and surfactant-free aqueous method, which enables the generation of, at large-scale, low-cost, and moderate temperatures, advanced metal oxide thin films with controlled complexity The strategy consists of monitoring of the nucleation, growth, and aging processes by means of chemical and electrostatic control of the interfacial free energy It enables the control of the size of nano-, meso-, and microcrystallites, their surface morphology, orientations onto various substrates, and crystal structure
2,619 citations
TL;DR: In this article, the authors report measurements of the oxide scale thickness and oxide grain size as a function of time during the oxidation of high-purity nickel in the temperature range 500-800°C.
Abstract: Below 1000°C the oxidation of nickel cannot be controlled by the diffusion of ions through the bulk crystal lattice of the pure oxide, because the measured oxidation rates are several orders of magnitude faster than would be predicted on this basis. Short-circuit diffusion through oxide grain boundaries or dislocations has usually been held responsible, but there has hitherto been no proper quantitative confirmation of this mechanism. We report measurements of the oxide scale thickness and oxide grain size as a function of time during the oxidation of high-purity nickel in the temperature range 500–800°C. All the oxidation experiments were carried out in pure oxygen at a pressure of one atmosphere. The measured parabolic oxidation rate constants have been compared with those calculated from grain boundary diffusion data obtained in our previous work, using a grain boundary diffusion model for the oxidation process. The quantitative agreement between measured and calculated oxidation rates shows c...
2,579 citations