Topic
p–n junction
About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.
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TL;DR: In this article, the contribution of dark current contributing mechanisms can be separated from each other in each diode and an idea of the dominant mechanism of the two sources of the ohmic current, namely surface leakage currents and contribution of dislocations intersecting the junction can also be had from temperature dependent study of shunt impedance.
45 citations
TL;DR: In this article, the photovoltage and photocurrent of a strongly illuminated p-n junction solar cell were derived by solving the ambipolar diffusion equation, and a complete boundary condition was derived for the junction, which was valid for all levels of injection.
Abstract: Expressions for the photovoltage and photocurrent of a strongly illuminated p-n junction solar cell are derived by solving the ambipolar diffusion equation. A complete boundary condition is derived for the junction, which is valid for all levels of injection. In the open-circuit case, results are in agreement with those given by earlier theories, while in the short-circuit case, the current is found to saturate at the ratio of the diffusion potential to the internal resistance. Results are used to explain the experimental results of earlier workers.
45 citations
Patent•
14 Sep 1998TL;DR: In this paper, the p-n junction is formed between two semiconductor regions of a semiconductor with a breakdown field strength of at least 106 V/cm, and a channel region is provided in series with a silicon component between the two terminals.
Abstract: A p-n junction is connected between two terminals. The p-n junction is formed between two semiconductor regions of a semiconductor with a breakdown field strength of at least 106 V/cm. A channel region, which adjoins the p-n junction is connected in series with a silicon component between the two terminals. The channel region is provided in a first of the two semiconductor regions. A depletion zone of the p-n junction carries the reverse voltage in the off state of the silicon component. The silicon component is preferably a
45 citations
Patent•
06 May 1987TL;DR: In this paper, an electron emitting device is provided with an N type semiconductor disposed in contact with a first electrode, and a low work function metal electrode contacts the P-type semiconductor thus defining a Schottky barrier.
Abstract: An electron emitting device is provided with an N type semiconductor disposed in contact with a first electrode. A P type semiconductor contacts the N type semiconductor to define a PN junction. A low work function metal electrode contacts the P type semiconductor thus defining a Schottky barrier. First and second means are provided to forward bias the PN junction and to reversed bias the Schottky barrier, respectively.
45 citations
TL;DR: In this paper, an abrupt p-n diode structure was used to collect the charge from a 1mCi Ni-63 source, and an open circuit voltage of 0.95V and a short circuit current density of 8.8 nA/cm2 were measured in a single pn junction.
Abstract: A betavoltaic cell in 4H SiC is demonstrated. An abrupt p-n diode structure was used to collect the charge from a 1mCi Ni-63 source. An open circuit voltage of 0.95V and a short circuit current density of 8.8 nA/cm2 were measured in a single p-n junction. An efficiency of 3.7% was obtained. A simple photovoltaic type model was used to explain the results. Good correspondence with the model was obtained. Fill factor and backscattering effects were included. Efficiency was limited by edge recombination and poor fill factor.
45 citations