scispace - formally typeset
Search or ask a question
Topic

p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.


Papers
More filters
Journal ArticleDOI
TL;DR: In this article, a polarization and wavelength-insensitive GaAs/GaAlAs optical switch with a Y junction was proposed, which exhibits a digital response with respect to current, allowing its use as a 1*2 optical switch.
Abstract: A polarization- and wavelength-insensitive semiconductor guided-wave optical switch with a Y junction is proposed. The switch exhibits a digital response with respect to current, allowing its use as a wavelength-insensitive 1*2 optical switch. The switching characteristics are analyzed by using the beam propagation method, and a design example is given. The polarization- and wavelength-insensitive switching operation has been confirmed with a fabricated GaAs/GaAlAs switch at wavelengths of 1.3 and 1.55 mu m, and the on/off ratio exceeded 20 dB at an injection current of 250 mA at these wavelengths. >

43 citations

Journal ArticleDOI
TL;DR: Successful fabrication of a topological p-n junction on a surface of 3D-TI Bi2−xSbxTe3−ySey thin films is reported and a dramatic change in electrical transport observed at the TPNJ promises novel spin and charge transport of3D-TIs for future spintronics.
Abstract: A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three-dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi2−xSbxTe3−ySey thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac surface of Bi2−xSbxTe3−ySey on its top half by using tetrafluoro-7,7,8,8-tetracyanoquinodimethane as an organic acceptor molecule, a half surface can be converted to p-type with leaving the other half side as the opposite n-type, and consequently TPNJ can be created. By sweeping the back-gate voltage in the field effect transistor structure, the TPNJ was controlled both on the bottom and the top surfaces. A dramatic change in electrical transport observed at the TPNJ on 3D-TI thin films promises novel spin and charge transport of 3D-TIs for future spintronics. Dirac cone surface states rectify an ultralow dissipative spin and charge current, but it is yet to be confirmed in devices. Here, Tuet al. observe p-type electrical transport on one half surface and n-type on the other in Bi2−xSbxTe3−ySeythin films, realizing a topological p-n junction.

43 citations

Patent
29 May 2008
TL;DR: In this paper, a power supply maintenance part 5 comprises a diode 7 and a capacitance element 8 connected in series between internal power voltage and reference potential, where the leak of charge accumulated in the capacitor element 8 can be prevented, since it becomes reverse bias by PN junction formed of a drain and an N-well of the transistor.
Abstract: PROBLEM TO BE SOLVED: To extend flag holding time with a smaller capacitance element by sharply decreasing a current leak. SOLUTION: A power supply maintenance part 5 comprises a diode 7 and a capacitance element 8 connected in series between internal power voltage and reference potential. In the diode 7, a P channel MOS transistor is connected to the diode, and internal power voltage VDD is supplied to a source terminal of the transistor, and a gate terminal, a bulk terminal of the transistor and one junction of a capacitor is connected to the drain terminal. When the internal power voltage VDD of rectifier circuit 2 stops supply, the leak of charge accumulated in the capacitance element 8 can be prevented, since it becomes reverse bias by PN junction formed of a drain and an N-WELL of the transistor. COPYRIGHT: (C)2008,JPO&INPIT

43 citations

Patent
08 Apr 1988
TL;DR: In this article, the authors propose to use a recombination layer to improve latchup withstanding capability of a CMOS device, which is a polycrystalline silicon or amorphous silicon layer having plentiful carrier recombination centers.
Abstract: In order to improve latchup withstanding capability, a CMOS device is provided with at least one recombination layer which is buried in either or both substrate regions of a pMOS and a nMOS at such a position that a depletion layer formed at a pn junction between both substrate regions of the pMOS and nMOS does not reach the recombination layer. The recombination layer is a polycrystalline silicon or amorphous silicon layer having plentiful carrier recombination centers, or a layer having plentiful traps formed by ion implantation, or a layer of a compound semiconductor having a small band gap.

43 citations

Journal ArticleDOI
TL;DR: In this article, growth and electrical characteristics of Mg-doped p-type nonpolar GaN films, grown on (11¯02) r-plane sapphire substrates via metalorganic chemical vapor deposition, were investigated as a function of growth rate, the ammonia to trimethylgallium flow ratio (V/III ratio), and the growth temperature.
Abstract: Growth and electrical characteristics of Mg-doped p-type nonpolar (112¯0) a-plane GaN films, grown on (11¯02) r-plane sapphire substrates via metalorganic chemical vapor deposition, were investigated as a function of growth rate, the ammonia to trimethylgallium flow ratio (V/III ratio), and the growth temperature. The electrical conductivity of the films exhibited a strong dependence on the growth parameters. Secondary-ion-mass-spectroscopy measurements indicated that more Mg was incorporated at higher growth rate and at lower growth temperatures. The Mg concentration in the films increased linearly with the Mg flow. A maximum hole concentration of 6.8×1017cm−3 was achieved at room temperature for a Mg concentration of 7.6×1019cm−3, corresponding to 0.9% ionization. Further increase in the Mg concentration resulted in increased surface roughness as well as a significant decrease in the hole concentration. p-n junction diodes were fabricated using nonpolar a-plane GaN, and the current-voltage characteristi...

43 citations


Network Information
Related Topics (5)
Silicon
196K papers, 3M citations
92% related
Thin film
275.5K papers, 4.5M citations
91% related
Band gap
86.8K papers, 2.2M citations
91% related
Photoluminescence
83.4K papers, 1.8M citations
90% related
Quantum dot
76.7K papers, 1.9M citations
88% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202314
202237
2021116
2020166
2019251
2018203