p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.

Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering

Abstract: An optimization of band alignment at the p–n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se)2 (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel “3-step chalcogenization process” for Cu2–xSe-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable “spike” type conduction band alignment instead of “cliff” type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J–V–T analysis.

Nonlinear solutions of PN junctions of piezoelectric semiconductors

Abstract: A PN junction between two types of piezoelectric semiconductors (PSCs) is analyzed based on the fully coupled nonlinear equations of PSCs without any assumptions. A perturbation theory is employed to obtain the analytical solution of the considered nonlinear problem. A general solution to one-dimensional problems for PSCs is represented by a sum of a series of perturbation solutions. Typical properties including the electromechanical fields, built-in potential and the current–voltage characteristics of the piezoelectric PN junction are investigated for conditions of mechanical loading combined with a bias. The results reveal that the simplified linear (i.e., first-order perturbation) solution reported in the literature fails to describe the nonlinear characteristics, such as current–voltage characteristics of the piezoelectric PN junction, although it can give the electromechanical fields as well as concentrations of the electrons and holes near the interface of the PN junction for small carrier concentration perturbations. The presented nonlinear solution is valid and corresponds closely with the numerical solutions based on the commercial software COMSOL.

Fabrication of a novel polyhedron-like WO3/Ag2CO3 p-n junction photocatalyst with highly enhanced photocatalytic activity

Abstract: Polyhedron-like WO3 (n-type WO3) nanoparticles were synthesized by a simple hydrothermal reaction without using any template or surfactant. The Polyhedron-like WO3/Ag2CO3 p-n junction photocatalyst was first synthesized by a simple impregnation-deposition way. The obtained samples were investigated by XRD, BET, XPS, SEM, TEM etc. The separation mechanisms of photo-induced electrons (e−) and photo-induced holes (h+) of the Polyhedron-like WO3/Ag2CO3 p-n junction samples were characterized by PL technique, EIS and determination of active sites and species in the photocatalytic reactions. In this p-n junction structure, Polyhedron-like WO3 nanoparticles adhered to the surface of the Rod-like p-type Ag2CO3 nanoparticles. The Polyhedron-like WO3/Ag2CO3 p-n junction photocatalyst showed much higher photocatalytic activity than both single materials for RhB degradation under UV–vis light irradiation, and even 17 times higher than commercial powders (P25) at the same circumstance. Even compared with the related photocatalyst, it still exhibits the highest photocatalytic ability. The highly enhanced photocatalytic of the Polyhedron-like WO3/Ag2CO3 p-n junction photocatalyst can be attributed to extended absorption, more effective separation of photogenerated charges, the transfer rate of photo-induced charge carriers and forming of p-n junction system.

Breakdown in p‐n junction diodes made on polycrystalline silicon of large grain size

Abstract: This communication describes the voltage‐current characteristics in the breakdown region of p‐n junctions made on polycrystalline silicon of large grain size. The observed soft breakdown characteristics have been explained by taking into account the effect of curvature of the junction near the grain boundaries.