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p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.


Papers
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Journal ArticleDOI
TL;DR: In this paper, very low energy BF+2 ion implantation has been used to form very shallow (≤1000 A) junctions in crystalline and Ge+ preamorphized Si.
Abstract: Very low energy (6 keV) BF+2 ion implantation has been used to form very shallow (≤1000 A) junctions in crystalline and Ge+ preamorphized Si. Low‐temperature furnace annealing was used to regrow the crystal, and rapid thermal annealing was used for dopant activation and radiation damage removal. In preamorphized samples, Ge+ implantation parameters were found to have an influence on B diffusion. Our results show that for temperatures higher than 950 °C, B diffusion, rather than B channeling, becomes the dominant mechanism in determining the junction depth. Computer simulations of the profiles show regions of retarded and enhanced B diffusion, which depend on surface and end‐of‐range damage, respectively.

39 citations

Journal ArticleDOI
TL;DR: An expression for the dominant normal model (natural frequency) of a p-n-junction diode is derived in this article. But the expression is not applicable to any concentration profiles of impurity and recombination centers, regardless of high recombination rates or band-edge distortion in the emitter.
Abstract: An expression for the dominant normal model (natural frequency) of a p‐n–junction diode is derived. The expression includes the effects of minority charge in the quasineutral emitter as well as the base region, and is applicable for any concentration profiles of impurity and recombination centers, regardless of high recombination rates or band‐edge distortion in the emitter. Its use enables the experimental determination of material parameters pertaining to the relative roles of the emitter and the base in governing the behavior of various junction devices, including diodes, transistors, and solar cells.

39 citations

Journal ArticleDOI
TL;DR: In this paper, the free-boundary problem for Poisson's equation is formulated and approximately solved in oblate spheroidal coordinates, where the boundary of the space charge region and the related depletion potential are derived.
Abstract: An analysis is given of the space charge region that is induced in a semiconductor by a circular Schottky contact Using the depletion approximation, the resulting free-boundary problem for Poisson’s equation is formulated and approximately solved in oblate spheroidal coordinates Expressions are derived for the boundary of the space charge region and the related depletion potential Calculations of the thickness of the Schottky barrier as a function of the diode size, down to the nanometer range, show good agreement with published results obtained numerically

39 citations

Journal ArticleDOI
TL;DR: In this article, the p-n diode of 3C·SiC/n-6H-SiC showed successfully rectified I-V characteristics and steep breakdown characteristics like the Si pn junction.

39 citations

Journal ArticleDOI
TL;DR: The photovoltaic response of typical diodes has a quantum efficiency of 60-70% in the wavelength region 0.7-1.1 µm as mentioned in this paper.
Abstract: p‐n junction diodes have been prepared by the ion implantation of Cd into p‐type CuInSe2. Electroluminescence is observed near 1.3 μ with internal quantum efficiency of 15% at 77 °K and ∼0.1% at room temperature. The photovoltaic response of typical diodes has a quantum efficiency of 60–70% in the wavelength region 0.7–1.1 μ.

39 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202314
202237
2021116
2020166
2019251
2018203