Topic
p–n junction
About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.
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TL;DR: In this article, the effect of the thickness of the n layer forming the front surface of the junction has been investigated, and it has been shown that 0.1-? diffusions give essentially "windowless" detectors.
Abstract: Silicon p-n junction particle detectors have been fabricated by diffusing phosphorus to various depths between 0.1 and 2.0 ? into high resistivity p-type silicon. Various base material resistivities have been employed, ranging from 100 ? cms to 13,000 ? cms. Diffusions have been carried out both by the "gaseous" and the "paint-on" process. The devices produced have ranged in area from 1 mm2 to 1 cm2, with the majority of detectors having an area of ~.2 cm2. Using 5.5 mev ? particles and a 5 × 5 mm device, the best line width that has been obtained Is 20 kev. It has been found that the 1 cm2 devices give line widths of ~ 50 kev. The effect of the thickness of the n layer forming the front surface of the junction has been investigated, and it has been shown that 0.1-? diffusions give essentially "windowless" detectors. Other properties that have been examined are space charge generation of leakage current, charge collection efficiency as a function of bias and incident particle direction, and signal rise time.
39 citations
TL;DR: In this paper, the spectral response of back-and front-surface-illumination MgZnNO/ZnO p-n ultraviolet photodetector fabricated by plasma-assisted molecular beam epitaxy on a sapphire substrate was investigated.
39 citations
TL;DR: In this article, a new fabrication technique for passivated silicon Schottky barrier diodes is described, and it is shown that the p-n junction guard ring or "hybrid" approach produces barrier whose forward and reverse electrical characteristics are in excellent agreement with simple theory, and that the excess noise normally found in passivated SBSs has been significantly reduced.
Abstract: A new fabrication technique for passivated silicon Schottky barrier diodes is described. It is shown that the p-n junction guard ring or "hybrid" approach produces Schottky barriers whose forward and reverse electrical characteristics are in excellent agreement with simple theory, and that the excess noise normally found in passivated Schottky barrier diodes has been significantly reduced. The influence of metal barrier height and diffusion profile on the charge storage characteristics of these devices is discussed and examined experimentally.
39 citations
Patent•
13 Jul 1999
TL;DR: In this article, a method of producing a semiconductor device in which an electrode is formed by using a metallic paste material on a substrate covered with a silicon nitride film or a titanium oxide film was proposed.
Abstract: A solar cell and a method of producing the same which realizes electrical separation of the p n junction in a simple manner, and a method of producing a semiconductor device a method of producing a semiconductor device in which an electrode is formed by using a metallic paste material on a substrate covered with a silicon nitride film or a titanium oxide film, wherein a glass paste 104 composed mainly of glass which has a property of melting silicon is provided on an n type diffusion layer 101 in the p n junction; the substrate is baked so that penetration of the n type diffusion layer 101 is effected by the glass paste; aluminum is diffused in the n type diffusion layer 101 below a p electrode 103 formed of an aluminum silver paste to thereby form a p type inversion layer 105 inverted to a p type, whereby the electrical separation of the p n junction can be realized. Further, when a metallic paste material is provided on an insulating film and the metallic paste material is baked, the material penetrates the insulating film to electrically contact with the semiconductor substrate.
39 citations
Patent•
09 Jul 1990
TL;DR: The GaN pn junction light emitting element constituted this way operates as a light emitting diode by voltage being applied between electrodes 6 and 7, and under the condition of 3V in rising voltage and 10mA in the current at application of 3,5V voltage, it shows 480nm light emission peak wave length, and 30mcd in light emission brightness as discussed by the authors.
Abstract: PURPOSE: To enable the accurate control of the semiconductor properties including electric properties and optical properties and get a blue light emitting diode with high brightness, wherein element properties are improved sharply, by sharply reducing the degree of unconformity of lattice in the element of conventionalGaN/αAl 2 O 3 orGaN/AlN/α- -Al 2 O 3 structure, by the GaN/ZnO structure which becomes the primary combination in the structure of a light emitting element. CONSTITUTION: An ZnS 1- XOX epitaxial shock absorbing layer (ntype) 2, a ZnO layer (n-type) 3, a GaN epitacial layer (n-type) 4, a GaN epitaxial layer (p-type) 5, and an Al positive electrode 6 are provided on an ZnS(111) substrate 1, and 7 is an Al negative electrode. The GaN pn junction light emitting element constituted this way operates as a light emitting diode by voltage being applied between electrodes 6 and 7, and under the condition of 3V in rising voltage and 10mA in the current at application of 3,5V voltage, it shows 480nm light emission peak wave length, and 30mcd in light emission brightness. COPYRIGHT: (C)1992,JPO&Japio
39 citations