p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.

Is indium tin oxide a suitable electrode in organic solar cells? Photovoltaic properties of interfaces in organic p∕n junction photodiodes

Abstract: The charge generation properties at all interfaces of a p∕n junction, bilayer photodiode have been investigated by means of the photoaction spectrum (PAS) as a function of applied bias. The organic photodiode was fabricated with a low-glass transition temperature (Tg) polysiloxane with pendant hydrazone groups as the p-type material and a perylene diimide derivative as the n-type material. The PAS under short circuit and reverse bias showed an antibatic response at the high-energy region (3.0–3.5eV), and a symbatic response at the low-energy region (2.0–3.0eV). However, under forward bias, the PAS showed the opposite behavior. These results are interpreted in terms of the band structure of tin-doped indium oxide (ITO) that prevents effective photoinjection of electrons at the polymer/ITO interface and the relative energy levels of the constituent materials.

Semiconductor structure with closely coupled substrate temperature sense element

Abstract: MOSFET devices (82) or circuits (80) incorporating an improved substrate temperature sensing element (94) are obtained by forming a PN junction (J2) directly on a thin (gate) dielectric region (140). The temperature sense junction (J2) is desirably formed in a poly layer( 134). By mounting it directly on thin (gate) dielectric (140) its thermal response to temperature changes in the substrate (111) is improved while still being electrically isolated from the substrate (111). It is desirable to provide over-voltage protection elements (100) coupled to the junction (J2) to avoid rupture of the underlying thin dielectric (140). Because the sense diode (94) and all the over-voltage protection devices (102) may be made of poly (136,138,144) with junctions (J2) perpendicular to the substrate (111), the structure is particularly compact and simple to fabricate.

The frequency response of porous silicon electroluminescent devices

Abstract: Under a constant forward bias, porous silicon light‐emitting devices (LEDs) produce stable electroluminescence (EL) that is detectable at applied voltages as low as 5 V and visible in daylight at higher voltages. The recombination dynamics of the EL are studied and correlated to the photoluminescence properties of light‐emitting porous silicon (LEPSi). The EL efficiency is related to the LEPSi properties and the device configuration. LEPSi LEDs with an EL efficiency of 0.01% have been achieved. The frequency response of the EL to a modulating ac bias is measured. For metal/LEPSi LEDs, the −3 dB frequency is determined by the carrier transit time which must be larger than the carrier lifetime to achieve efficient EL. For LEPSi pn junction LEDs, the −3 dB frequency is determined only by the carrier lifetime and can be in excess of 200 kHz.

Deep p-n junction in Hg1-xCdxTe created by ion milling

Abstract: Thick n-type layers near the surface of p-Hg1-xCdxTe produced as a result of low energy ion milling have been investigated. EBIC measurements of cleaved cross sections show the depth and shape or the p-n junction under the surface of (HgCd)Te. An analysis of the n-type layers by differential Hall effect measurements is reported. It was found that the electron concentration in the n-type layer is of the order of 1015 cm-3 and is nearly constant from the surface to the p-n junction. A diminishing density of etch pits was found on the surfaces influenced by ion milling. A model for the p-n conversion during ion milling is discussed.