p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.

Polyimide passivation of In0.53Ga0.47As, InP, and InGaAsP/InP p‐n junction structures

Abstract: Techniques for passivating In0.53Ga0.47As, InGaAsP, InP, and InGaAsP/InP p‐n junction structures with polyimide have been developed. Low stable leakage current is maintained for prolonged bias, even after exposure to high temperatures (∼320 °C) during packaging. 150‐μm‐diam In0.53Ga0.47As photodiodes with a breakdown voltage of ∼50 V were passivated with polyimide and were found to consistently have leakage currents of ∼10 nA at a 20‐V bias.Details of the passivation process are given.

Activation energy analysis as a tool for extraction and investigation of p–n junction leakage current components

Abstract: The origin of p–n junction reverse current is investigated by a method based on the analysis of the leakage current activation energy. Its main advantages lie in the possibility to distinguish multiple reverse-bias dependent leakage components and determine their mechanisms, which can be different than the Shockley–Read–Hall or field-enhanced generation mechanisms. This is illustrated for state-of-the-art silicided shallow junctions, exhibiting a local Schottky effect, due to small-area silicide penetrations. An estimate of the area of the Schottky (or Shannon) contacts follows from the analysis. The method may be used for various semiconductor materials and leakage current origins.

A homogeneous p-n junction diode by selective doping of few layer MoSe2 using ultraviolet ozone for high-performance photovoltaic devices.

Abstract: The realization of p–n homojunctions, which can be achieved via spatially controlled carrier-type modulation, remains a challenge for two-dimensional transition metal dichalcogenides. Here, we report an effective method to tune intrinsic n-type few-layer MoSe2 to p-type through controlling precisely the ultraviolet-ozone treatment time, which can be attributed to the surface charge transfer from the underlying MoSe2 to MoOx (x < 3). The resulting hole mobility and concentration are ∼20.1 cm2 V−1 s−1 and ∼1.9 × 1012 cm−2, respectively, and the on–off ratio is ∼105, which are comparable to the values of pristine n-type MoSe2. Moreover, the lateral p–n homojunction prepared by partially treating MoSe2 displays a high rectification ratio of 2.4 × 104, an ideality factor of 1.1, and a high photoresponsivity of 0.23 A W−1 to the 633 nm laser at Vd = 0 V and Vg = 0 V due to the built-in potential in the p–n homojunction area. Our findings ensure the MoSe2 p–n diode as a promising candidate for future low-power operating photodevices.

P/N junction device having porous emitter

Abstract: In a semiconductor P/N junction device, a porous emitter is provided which has high saturation current to limit injected charge when the device is conducting The porous emitter includes a lightly doped region abutting a contact on the surface of the device to regulate minority carrier injection under forward bias and shield the contact from stand-off field when the device is not conducting One or more heavily doped regions are provided in the first region to provide low contact resistance for the flow of majority carriers into the emitter