Topic
p–n junction
About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.
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TL;DR: In this paper, the p-GaN layer was reduced so that the punch-through breakdown occurred before the hard breakdown, and the diode showed a high voltage of 4.9 kV with high reverse avalanche capabilities against sudden increase of reverse current over 5 orders of magnitudes.
Abstract: In order to avoid sudden catastrophic hard breakdown in high breakdown voltage vertical GaN p–n junction diodes, punch-through induced breakdown structures have been newly considered. Mg acceptor concentration in the p-GaN layer was reduced so that the punch-through breakdown occurred before the hard breakdown. By using a wafer with triple drift layers and the p-GaN layer with lowered Mg concentration of 3 × 1017 cm−3 grown on a freestanding n-GaN substrate, the diode showed a high breakdown voltage of 4.9 kV with high reverse avalanche capabilities against sudden increase of reverse current over 5 orders of magnitudes. No degradation was observed after fifteen repetitive measurements.
36 citations
TL;DR: In this paper, the photocatalytic properties of iron (III)-doped TiO 2-based nanoparticles were evaluated by the methyl orange oxidation, and it was shown that the n-n junction structure may be responsible for the high photocatalysis activity of P25 and other mix-phase crystalline titania.
36 citations
TL;DR: This study develops a colloidal synthetic route for the design of MoSe 2-Cu2S nanoheterostructures, where the Cu2S islands grow vertically on top of the defect sites present on the MoSe2 surface, thereby forming a vertical p-n junction having plasmonic characteristics.
Abstract: Heterostructures based on atomically thin two-dimensional layered transition metal dichalcogenides are highly promising for optoelectronic device applications owing to their tunable optical and electronic properties. However, the synthesis of heterostructures with desired materials having proper interfacial contacts has been a challenging task. Here, we develop a colloidal synthetic route for the design of MoSe2–Cu2S nanoheterostructures, where the Cu2S islands grow vertically on top of the defect sites present on the MoSe2 surface, thereby forming a vertical p–n junction having plasmonic characteristics. These MoSe2–Cu2S nanoheterostructures are used to fabricate photodetectors with superior photoresponse characteristics. The fabricated device exhibits a broad-band spectral photoresponse over the visible to near-infrared range with a peak responsivity of 410 mA W–1 at −2.0 V and over 3000-fold photo-to-dark current ratio. The superior device performance of MoSe2–Cu2S over only MoSe2 devices is due to the...
36 citations
Patent•
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10 Dec 1993
TL;DR: In this article, an inexpensive, robust concrete solar cell comprises a photovoltaic material embedded in and extending beyond the major surfaces (16 and 18) of a matrix layer, which typically comprises a high strength, cementitious material, such as a macrodefect free cement.
Abstract: An inexpensive, robust concrete solar cell (10) comprises a photovoltaic material embedded in and extending beyond the major surfaces (16 and 18) of a matrix layer (14). The matrix layer typically comprises a high strength, cementitious material, such as a macrodefect free cement. The photovoltaic material comprises particles (12) of high-resistivity single crystal silicon, typically ball milled from ingot sections unsuitable for slicing into silicon wafers. The ingot sections include unprecipitated dissolved oxygen that is electrically activated by a low temperature annealing process to produce n-type silicon, even in silicon crystals that include a p-type dopant. An aluminum sheet (28), positioned on the backside of the matrix layer, is briefly melted together with the silicon particles to produce a p-type aluminum-doped silicon region (22) that forms a pn junction with the n-type region (24) of the particle. The aluminum sheet also provides the electrical contact to the p-type regions. The front surface of the matrix layer, from which the n-portion of the silicon particle protrudes, is covered with a translucent indium tin oxide conductive layer (30) that provides electrical contacts to the n-portion of the pn junction and digitated electrode (32) for conducting current off the cell. A voltage is generated between the two conductive layers when light incident on the photovoltaic particle through the indium tin oxide conductive layer creates charge carriers.
35 citations
TL;DR: ZnCdSeTe/ZnMgSeTe quasi-quaternary light-emitting devices emitting in the green-yellow wavelength region grown on ZnTe substrates are promising for efficient green light emitters.
Abstract: ZnCdSeTe/ZnMgSeTe quasi-quaternary light-emitting devices emitting in the green-yellow wavelength region grown on ZnTe substrates are promising for efficient green light emitters. To solve the n-type conductivity problem in ZnTe-related materials, Cl-doped ZnMgSeTe quasi-quaternary layers which consisted of very thin ZnSe and ZnMgSeTe were studied and an n-type ZnMgSeTe quasi-quaternary layer with high carrier concentration of 9.4 × 10 17 cm -3 was observed. The low-temperature luminescence properties of ZnCdSeTe/ZnMgSeTe quasi-quaternary quantum wells were studied and sharp emission from the ZnCdSeTe quantum well layers with FWHM of 8 meV was observed. ZnCdseTe/ZnMgSeTe quasi-quaternary p-n junction light-emitting diodes (LEDs) were fabricated and green emission from the LED structure was observed at room temperature.
35 citations