Topic
p–n junction
About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.
Papers published on a yearly basis
Papers
More filters
••
TL;DR: In this paper, a high Schottky-barrier between Al and S-passivated p-type Si(100) surface was reported, with a barrier height of 1.1 eV and activation energy of 0.94-0.97 eV.
Abstract: We report a high Schottky-barrier between Al and S-passivated p-type Si(100) surface. Capacitance-voltage measurements indicate a barrier height of 1.1 eV, while activation-energy measurements suggest 0.94-0.97 eV. Possible reasons for the discrepancy are proposed. The barrier height of 1.1 eV suggests degenerate inversion on the p-type Si surface, and Fermi statistics is used to describe its electrostatics. Although fabricated like a Schottky diode, this Al/S-passivated p-type Si(100) device works like a p-n junction diode. Temperature-dependent current-voltage measurements reveal that S passivation reduces the reverse saturation current of Al/p-type Si(100) diodes by over six orders of magnitude
35 citations
••
35 citations
••
TL;DR: In this article, the authors presented the high reliability of the guardring-free planar InAlAs avalanche photodiode (APD) and its degradation mode analysis and estimated mean times to failures at 85 are 25, 100, and 22 million hours, respectively.
Abstract: This paper presents the high reliability of the guardring-free planar InAlAs avalanche photodiode (APD) and its degradation mode analysis. We have conducted long-term and high-temperature aging tests under 175degC, 200degC, 225degC, and 250degC. There were three degradation modes as follows: 1) the increase in the dark current; 2) the decrease in the breakdown voltage; and 3) short circuit. Their thermal activation energies were 0.96, 1.30, and 0.93 eV, respectively. Their estimated mean times to failures at 85 are 25, 100, and 22 million hours, respectively. Increased dark current is generated in the upper side of the absorbing layer. The breakdown voltage decreased with aging time because the depletion width in the absorbing layer shrinks from the region side. Any degradation mode on the surfaced p-n junction did not appear in spite of the 10 000-h aging test at a high temperature of 200degC. The guardring-free planar InAlAs APD has the advantage of high reliability because the electric field of a surfaced p-n junction is weakened by the underlying field control layer.
35 citations
••
35 citations
••
TL;DR: The band-diagram of nanorod-junctions could be mapped to bring out the salient features of a diode, such as p- and n-sections, band-bending, depletion region, albeit interestingly in the nanoscale.
Abstract: We map band-edges across a pn-junction that was formed in a nanorod. We form a single junction between p-type Cu2S and n-type CdS through a controlled cationic exchange process of CdS nanorods. We characterize nanorods of the individual materials and the single junction in a nanorod with an ultrahigh vacuum scanning tunneling microscope (UHV-STM) at 77 K. From scanning tunneling spectroscopy and correspondingly the density of states (DOS) spectra, we determine the conduction and valence band-edges at different points across the junction and the individual nanorods. We could map the band-diagram of nanorod-junctions to bring out the salient features of a diode, such as p- and n-sections, band-bending, depletion region, albeit interestingly in the nanoscale.
35 citations