p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.

Photoelectrochemical Properties of the p−n Junction in and near the Surface Depletion Region of n-Type GaN

Abstract: Photoelectrochemical water splitting is expecting a new energy source to produce hydrogen from water. The photoilluminated electrode using a uniform semiconductor single crystal has been well analyzed, but the effect of that using a structural semiconductor is still obscure. The properties of one of the structural semiconductors with a p−n junction in and near a depletion region were investigated using the samples with thin p-type layers on n-type GaN in this article. The properties were also evaluated by the calculation based on the Poisson equation. Not only the band-edge energy of a semiconductor at the semiconductor−electrolyte interface but also the length of the depletion region and the band-edge energy profile affected the photocurrent density from the evaluation. The effect of the energy profile of the depletion region is also discussed.

Electroluminescence from a ZnSe p-n Junction Fabricated by Nitrogen-Ion Implantation

Abstract: Electroluminescence has been obtained from ZnSe p-n junctions. ZnSe films were grown on n-type GaAs substrates by molecular beam epitaxy. The dopant used for n-type ZnSe was Ga, and p-type ZnSe was formed by nitrogen ion implantation into undoped ZnSe which was grown on the Ga-doped ZnSe layer. Rapid thermal annealing was performed using an infrared lamp in N2 ambient. The formation of a p-n junction was confirmed by measuring electron beam-induced current. The electroluminescence spectra were dominated by two peaks of band-edge emission at 446 and 459 nm at 77 K.

Semiconductor device and manufacturing method thereof

Abstract: A semiconductor device simplifies the manufacturing process The device includes a protective chip which has a surface Zener diode to protect a light emitting chip with an LED formed therein from surge voltage The protective chip is mounted over a wiring electrically coupled through a metal wire to an anode electrode coupled to a p-type semiconductor region whose conductivity type is the same as that of the semiconductor substrate of the chip The anode electrode of the protective chip is electrically coupled to the back surface of the chip without PN junction, so even if the back surface is in contact with the wiring, no problem occurs with the electrical characteristics of the Zener diode This eliminates the need to form an insulating film on the back surface of the chip to prevent contact between the back surface and the wiring, thus simplifying the manufacturing process

Use of silicide to bridge unwanted polycrystalline silicon P-N junction

Abstract: Polysilicon lines are utilized for interconnecting the various elements of CMOS devices. The polysilicon lines are doped with whatever dopant conveniently suits the processing step, to form an undesired PN junction. The junction is electrically short-circuited, preferably by a polysilicided section extending across the junction.

Light-Emitting Semiconductor Component Comprising a Protective Diode

Abstract: A light-emitting semiconductor component which contains a sequence of semiconductor layers ( 2 ) with an area of p-doped semiconductor layers ( 4 ) and n-doped semiconductor layers ( 3 ) between which a first pn junction ( 5 a, 5 b ) is formed. The pn junction ( 5 a, 5 b ) is subdivided into a light-emitting section ( 7 ) and a protective-diode section ( 8 ) in a lateral direction by means of an insulating section ( 6 ). An n-doped layer ( 9 ), which forms a second pn junction ( 10 ) which acts as a protective diode along with the p-doped area ( 4 ), is applied to the p-doped area ( 4 ) in the area of the protective-diode section ( 8 ), the first pn junction ( 5 b ) in the protective-diode section ( 8 ) having a larger area than the first pn junction ( 5 a ) in the light-emitting section ( 7 ). The protective-diode section ( 8 ) protects the light-emitting semiconductor component from voltage pulses due to electrostatic discharges (ESD).