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p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.


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Patent
29 Aug 2001
TL;DR: In this paper, a trench gate type power MOSFET with a thin film silicon carbide semiconductor layer formed on a trench side face to constitute an accumulation-type channel-forming region and enable the device to operate with a low gate voltage, low on-resistance and low power loss are set.
Abstract: In a silicon carbide semiconductor device such as a trench gate type power MOSFET, the film thickness and the impurity concentration of a thin film silicon carbide semiconductor layer formed on a trench side face to constitute an accumulation-type channel-forming region and enable the device to operate with a low gate voltage, low on-resistance and low power loss are set so that on impression of a reverse bias voltage a pn junction between a P-type epitaxial layer and an n - -type epitaxial layer undergoes avalanche breakdown before the thin film silicon carbide semiconductor layer undergoes punch-through. By this means it is possible to obtain a target high source-drain withstand voltage.

183 citations

01 Jan 2007
TL;DR: In this article, a review of the progress in the crystal growth and conductivity control of nitride semicon- ductors during the development of p−n junc- tion blue-light-emitting devices is presented.
Abstract: Marked improvements in the crystal- line quality of GaN enabled the production of GaN-based p−n junction blue-light-emitting and violet-laser diodes. These robust, ener- getically efficient devices have opened up a new frontier in optoelectronics. A new arena of wide-bandgap semiconductors has been developed due to marked improvements in the crystalline quality of nitrides. In this article, we review breakthroughs in the crystal growth and conductivity control of nitride semicon- ductors during the development of p−n junc- tion blue-light-emitting devices. Recent prog- ress mainly based on the present authors' work and future prospects of nitride semicon- ductors are also discussed. Group III nitride semiconductors are recog- nized as one of the most promising materials for fabricating optical devices in the visible short-wavelength and UV region. To develop such novel devices and clarify the intrinsic materials properties of nitrides, it is essential to grow high-quality single crystals and control their electrical conductivity. However, high- quality epitaxial GaN was impossible to grow and its conductivity was uncontrollable. These problems have prevented the development of GaN-based p−n junction blue-light-emitting devices for many years. 1) In 1986, we achieved a marked improve- ment in the crystal quality of GaN which enabled us to realize p-type conduction in nitrides and to control the conductivity of n-type nitrides in 1989. In the same year, these achievements led to the invention of the world's first GaN p−n junction blue/UV-light- emitting diode (LED). In 1990, stimulated emis- sion in the UV region at room-temperature (RT), which is indispensable for laser action, was also achieved. These breakthroughs inspired nitride researchers around the world to exert great effort, which eventually led to the commercialization of high-performance blue LEDs and long-lifetime violet-laser diodes (LDs), and to the development of nitride-based devices such as UV detectors and high-speed field-effect transistors.

179 citations

Journal ArticleDOI
TL;DR: In this article, the authors present an alternative picture, essentially based on a localized current flow through the interfacial oxide, mediated either by local reduction of the oxide layer thickness or by pinholes.

178 citations

Journal ArticleDOI
TL;DR: A graphene photodetector integrated on a silicon slot-waveguide, acting as a dual gate to create a p-n junction in the optical absorption region of the device, which exhibits a 3 dB bandwidth of 65 GHz, which is the highest value reported for a graphene-based photodetsector.
Abstract: With its electrically tunable light absorption and ultrafast photoresponse, graphene is a promising candidate for high-speed chip-integrated photonics. The generation mechanisms of photosignals in graphene photodetectors have been studied extensively in the past years. However, the knowledge about efficient light conversion at graphene p–n junctions has not yet been translated into high-performance devices. Here, we present a graphene photodetector integrated on a silicon slot-waveguide, acting as a dual gate to create a p–n junction in the optical absorption region of the device. While at zero bias the photothermoelectric effect is the dominant conversion process, an additional photoconductive contribution is identified in a biased configuration. Extrinsic responsivities of 35 mA/W, or 3.5 V/W, at zero bias and 76 mA/W at 300 mV bias voltage are achieved. The device exhibits a 3 dB bandwidth of 65 GHz, which is the highest value reported for a graphene-based photodetector.

174 citations

Journal ArticleDOI
TL;DR: In this paper, the photoresponse of field effect transistors (FETs) made of few-layer black phosphorus (3 nm to 8 nm thick), as a function of excitation wavelength, power and frequency, was investigated.
Abstract: Few-layer black phosphorus, a new elemental 2D material recently isolated by mechanical exfoliation, is a high-mobility layered semiconductor with a direct bandgap that is predicted to strongly depend on the number of layers, from 0.35 eV (bulk) to 2.0 eV (single-layer). Therefore, black phosphorus is an appealing candidate for tunable photodetection from the visible to the infrared part of the spectrum. We study the photoresponse of field-effect transistors (FETs) made of few-layer black phosphorus (3 nm to 8 nm thick), as a function of excitation wavelength, power and frequency. In the dark state, the black phosphorus FETs can be tuned both in hole and electron doping regimes allowing for ambipolar operation. We measure mobilities in the order of 100 cm2/V s and current ON/OFF ratio larger than 103. Upon illumination, the black phosphorus transistors show response to excitation wavelengths from the visible up to 940 nm and rise time of about 1 ms, demonstrating broadband and fast detection. The responsivity reaches 4.8 mA/W and it could be drastically enhanced by engineering a detector based on a PN junction. The ambipolar behavior coupled to the fast and broadband photodetection make few-layer black phosphorus a promising 2D material for photodetection across the visible and near-infrared part of the electromagnetic spectrum.

172 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202314
202237
2021116
2020166
2019251
2018203