Topic
p–n junction
About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.
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TL;DR: In this article, a method for preparing doped specimens of amorphous germanium and silicon by rf sputtering was described, and conductivity and thermoelectric power measurements were taken to demonstrate that doping has been achieved.
30 citations
TL;DR: In this article, the influence of a high-voltage interconnection on the blocking capability of a resurf diode is determined by solving the 2-D Poisson equation, and two different methods are discussed.
Abstract: The influence of a high-voltage interconnection onto the blocking capability of a resurf diode is determined by solving the 2-D Poisson equation. By adding a metal interconnection which crosses the space-charge region, the breakdown voltage is reduced, depending on the distance between the interconnection and the semiconductor surface. If the distance is 5 mu m, the breakdown voltage is decreased 38%, but if the distance is as low as 3 mu m, the breakdown voltage is decreased by 54%. To compensate for the effect of the interconnection two different methods are discussed. By optimizing the doping concentration of the p/sup -/layer in front of the p-n junction the influence of the interconnection can be reduced to 18% and 37%, respectively. The second method uses floating metal rings positioned in the oxide film between the semiconductor and the interconnection. If the rings are optimally positioned, the influence of the interconnection can be reduced from 54% to only 16%. It is shown that a variation of the lateral gap between the metal rings influences the shielding effectiveness. >
30 citations
TL;DR: In this paper, both n-and p-type SiC of different doping levels were electrochemically etched by HF and the electrochemical valence of 6.3'±'0.5 elementary charge per SiC molecule was determined.
Abstract: Both n- and p-type SiC of different doping levels were electrochemically etched by HF. The etch rate (up to 1.5 μm/min) and the surface morphology of p-type 6H-SiC were sensitive to the applied voltage and the HF concentration. The electrochemical valence of 6.3 ± 0.5 elementary charge per SiC molecule was determined. At p-n junctions (p-type layer on a n-type 6H-SiC substrate) a selective etching of the p-type epilayer could be achieved. For a planar 6H-4H polytype junction (n-type, both polytypes with equal doping concentrations) the 4H region was selectively etched under UV illumination. Thus polytype junctions could be marked by electrochemical etching. With HCl instead of HF no etching of SiC occurs, but a SiO2 layer (thickness up to 8 μm) is formed by anodic oxidation.
30 citations
TL;DR: In this paper, ZnO and ZnFe 2 O 4 nanostructures are rapidly synthesized at relatively low temperature and without any organic surfactants using an economical, simple, and environmentally friendly solid-state synthesis.
30 citations
TL;DR: In this article, the photovoltaic effect of typical ferroelectric oxides has been found in heterostructures of typical pn-like oxides, such as Pb(Ti, Zr)O3/Nb-doped SrTiO3, and a preliminary nonoptimized device shows high performance such as open circuit voltage of 0.7-0.8 V, external conversion efficiency of 0 6% to 0.8% and response time faster than 20 μs for ultraviolet light at room temperature, suggesting the potential of this di
Abstract: A substantial photovoltaic effect is found in heterostructures of typical ferroelectric oxides. Pb(Ti, Zr)O3/Nb-doped SrTiO3, especially, exhibits current–voltage characteristics of the photovoltaic effect of a typical pn junction (p: hole carrier type, n: electron carrier type). A preliminary nonoptimized device shows high performance such as open circuit voltage of 0.7–0.8 V, external conversion efficiency of 0.6%–0.8%, and response time faster than 20 μs for ultraviolet light at room temperature, suggesting the potential of this diode as a new class of photodiode. The results support the formation of a pn like junction by ferroelectric oxides. Additionally, the photovoltaic characteristics are tuned by the application of short pulse voltages and retained.
30 citations