p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.

High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions

Abstract: This paper presents new experimental data from a lateral PN junction silicon Mach-Zehnder optical modulator. Efficiencies in the 1.4V.cm to 1.9V.cm range are demonstrated for drive voltages between 0V and 6V. High speed operation up to 52Gbit/s is also presented. The performance of the device which has its PN junction positioned in the centre of the waveguide is then compared to previously reported data from a lateral PN junction device with the junction self-aligned to the edge of the waveguide rib. An improvement in modulation efficiency is demonstrated when the junction is positioned in the centre of the waveguide. Finally we propose schemes for achieving high modulation efficiency whilst retaining self-aligned formation of the PN junction.

Insulated gate type bipolar transistor

Abstract: PURPOSE: To eliminate a latchup by controlling a first carrier electric resistance value by a source layer shape between a first contact and a channel region, and preventing conduction of a pn junction. CONSTITUTION: A p + type silicon substrate is prepared, and an n - type layer of low impurity concentration semiconductor is formed by an epitaxial growth. A p + type drain layer 1, an n - type drain layer 2 are formed of the substrate and the n - type layer, and the surface of the layer 2 is oxidized to form a gate oxide film 3. A gate electrode 4 of a polysilicon film is formed thereon. With the electrode 4 as a mask boron is diffused to form a p-type base layer 5. Then, the center of the window of the electrode 4 is covered with a resist film patterned in a shape opened in a T shape, phosphorus ions are implanted to form an n + type source layer 6. Since carrier electric resistance value R 1 is controlled by the shape of the layer 6 to prevent conduction of the pn junction, a source resistance is improved to prevent a latchup. COPYRIGHT: (C)1992,JPO&Japio

GHz nanomechanical resonator in an ultraclean suspended graphene p–n junction

Abstract: We demonstrate high-frequency mechanical resonators in ballistic graphene p-n junctions. Fully suspended graphene devices with two bottom gates exhibit ballistic bipolar behavior after current annealing. We determine the graphene mass density and built-in tension for different current annealing steps by comparing the measured mechanical resonant response to a simplified membrane model. In a graphene membrane with high built-in tension, but still of macroscopic size with dimensions 3 × 1 μm2, a record resonance frequency of 1.17 GHz is observed after the final current annealing step. We further compare the resonance response measured in the unipolar with the one in the bipolar regime. Remarkably, the resonant signals are strongly enhanced in the bipolar regime.

Theoretical and experimental investigation of low-volgage and low-loss 25-Gbps Si photonic crystal slow light Mach–Zehnder modulators with interleaved p/n junction

Abstract: In this study, we investigated the performance of Si lattice-shifted photonic crystal waveguide (LSPCW) Mach-Zehnder modulators theoretically and experimentally The LSPCW increases the phase shift in modulator to 23 - 25 times higher, which allows for size reduction and high performance On-chip passive loss was reduced to less than 5 dB by optimizing each component We obtained 25 Gbps clear open eye and 3 dB extinction ratio at a drive voltage of 15 – 175 V for 200 μm phase shifter with linear p/n junction when we added a modulation loss of 7 dB This modulation loss was reduced to 08 dB, maintaining other performance, by employing interleaved p/n junction and optimizing doping concentrations