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p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.


Papers
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Journal ArticleDOI
TL;DR: In this article, a high-efficiency GaN-based thin film piezoelectric energy harvester was demonstrated by suppressed screening of a piezelectric field with the aid of a p-n diode junction.
Abstract: A high-efficiency GaN-based thin film piezoelectric energy harvester was demonstrated by suppressed screening of a piezoelectric field with the aid of a p–n diode junction. Piezoelectric field screening was effectively controlled by the deposition of highly resistive p-type GaN. The semi-intrinsic property of Mg-doped GaN and improved junction quality successfully suppressed internal screening, which resulted in a significantly enhanced output voltage up to 8.1 V and a maximum output current density of 3.0 μA cm−2. The energy-harvesting capabilities of the device were evaluated by charging a commercial capacitor, and self-powered light-emitting diode operation was demonstrated using the fabricated generator.

28 citations

Journal ArticleDOI
Yuexing Ji1, Uijin Jung1, Zhanpeng Xian1, Do Hyun Kim1, Jiyeon Yu1, Jinsub Park1 
TL;DR: In this paper, a pn junction structure consisting of hollow p-CuO nanospheres and n-ZnO nanorods (NRs) was constructed by thermal annealing.
Abstract: We report on ultraviolet (UV) photodetectors with a pn junction structure consisting of hollow p-CuO (h-CuO) nanospheres and n-ZnO nanorods (NRs). To form the pn junction structure, thermal annealing was conducted using a transferred monolayer of Cu-ion-incorporated polymer spheres onto the n-ZnO NRs/n-Si substrate. Device performance was evaluated by comparing the effects of h-CuO nanosphere coverage changed by sphere shrinkage during thermal annealing of Cu-ion-incorporated polymer spheres. Three samples were prepared by varying the transfer times of h-CuO on ZnO NRs: 0 times (Reference), 1 time (CZ-I), and 2 times (CZ-II). The CZ-II-based UV detector shows a fast rising time of 1.8 s and a falling time of 0.26 s, which are faster rising by 2.2 and 1.3 times and faster falling by 3.1 and 32.6 times than those of the CZ-I and Reference UV detectors, respectively, under illumination with UV light at 254 nm. Moreover, the On/Off current ratio of the CZ-II UV detector is 4.58, which is about 3.3 times and 3.5 times higher than that of the CZ-I and Reference devices, respectively. The higher h-CuO coverage on the ZnO NRs that form the pn junction structure can effectively separate the electron and hole and suppress recombination by mutual transfer of photo-generated electrons and holes in the heterojunction.

28 citations

Patent
08 Mar 1974
TL;DR: In this paper, a thermocouple system for catalytic controllers uses a PN junction at the cold junction for cold junction compensation, where the linearity of the voltage drop across the Pn junction permits accurate scaling for direct reading of the temperature at the output of the system.
Abstract: A thermocouple system for catalytic controllers uses a PN junction at the cold junction for cold junction compensation. The linearity of the voltage drop across the PN junction permits accurate scaling for direct reading of the temperature at the output of the system. A switching circuit is described wherein the desired switching temperature is electrically entered into the circuit and when the compensated temperature signal is equal to the entered signal, the output of the switching circuit is switched.

28 citations

Patent
07 Nov 1969
TL;DR: In this paper, a semiconductor photodevice sensitive to blue light is produced by placing an oxide layer containing a selected surface state charge density over one surface of the device, which creates a surface depletion region in the semiconductor material immediately underlying the oxide.
Abstract: A semiconductor photodevice sensitive to blue light is produced by placing an oxide layer containing a selected surface state charge density over one surface of the device. The fixed surface state charge density creates a surface depletion region in the semiconductor material immediately underlying the oxide. Blue light incident on the device, which is normally absorbed before reaching the depletion region associated with a PN junction strikes the surface depletion layer and produces photocurrent therein.

28 citations

Journal ArticleDOI
M. Jlassi, I. Sta, M. Hajji1, B. Ben Haoua, H. Ezzaouia 
TL;DR: In this article, a spin coating was used to fabricate a p-NiO/n-ZnO junction and the influence of the post annealing atmosphere (air or nitrogen) on the microstructure and surface morphology of NiO and ZnO thin films and the p NiO/NiO junction was examined.

28 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202314
202237
2021116
2020166
2019251
2018203