Topic
p–n junction
About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.
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TL;DR: In this paper, the forward current through the p-n junction is switched alternately between two fixed values, and the difference between the corresponding voltages is shown to vary linearly with temperature.
Abstract: A temperature sensor based on the use of two forward-biased p-n junctions is known to exhibit good linearity. An alternative sensor configuration, based on the same principle, but employing only one p-n junction is presented in this paper. The forward current through the p-n junction is switched alternately between two fixed values, and the difference between the corresponding voltages is shown to vary linearly with temperature. This scheme eliminates the problems associated with close matching required for the two p-n junction sensors. Experimental results obtained with the proposed scheme are presented. A configuration to exploit the temperature dependence of the p-n junction incremental resistance is also presented. >
28 citations
Patent•
03 Feb 1994
TL;DR: In this paper, the effect of accurate insulation between the devices and the pn junction area can be decreased, so that the junction capacitance becomes decreased, and the leakage current due to the damage of the edge is not generated.
Abstract: The present invention relates to a semiconductor and a method for fabrication thereof and particularly to a semiconductor having a field oxide having a shape such that the lower part is wider that the upper part. Therefore, according to the present invention, the ion implantation process for forming a channel stop region becomes unnecessary, because of the effect of accurate insulation between the devices and the pn junction area can be decreased, so that the junction capacitance becomes decreased. Furthermore, because LOCOS edge does not coincide with the junction edge, the leakage current due to the damage of the edge is not generated. Because a field oxide is of the buried inverse T-type, the effective width of the device is increased more than that of a mask. Because the bird's beak is not generated, the problem due to the narrow width can be settled.
28 citations
TL;DR: In this article, an analytical model for the depletion capacitance of silicon-on-insulator (SOI) optical modulation diodes was derived and the model accurately describes the parasitic fringe capacitances due to a lateral pn junction and can be extended to other geometries, such as vertical and interdigitated junctions.
Abstract: We derive an analytical model for the depletion capacitance of silicon-on-insulator (SOI) optical modulation diodes. This model accurately describes the parasitic fringe capacitances due to a lateral pn junction and can be extended to other geometries, such as vertical and interdigitated junctions. The model is used to identify the waveguide slab to rib height ratio as a key geometric scaling parameter for the modulation efficiency and bandwidth for lateral diodes. The fringe capacitance is a parasitic effect that leads to a decrease of about 20% in the modulation bandwidth of typical SOI diodes without a corresponding increase in the modulation efficiency. From the scaling relations, the most effective way to increase the modulation bandwidth is to reduce the series resistance of the diode.
28 citations
TL;DR: In this article, the electron diffusion length in p-GaN doped at 1·1018 cm−3 was estimated to be 790 A, and the minority carrier lifetime in the p-gaN was found to be 24 ps to 0.24 ns.
Abstract: Critical nitride-based p-n junction issues relating to wide bandgap bipolar device performance include minority carrier lifetime, defect related current characteristics and ohmic contact properties. Recent developments in p-GaN deposition processes resulted in GaN p-i-n UV photodetectors with improved deep UV responsivity, visible light rejection and shunt resistance characteristics. From the device data, the electron diffusion length in p-GaN doped at 1·1018 cm−3 was estimated to be 790 A, and the minority carrier lifetime in the p-GaN was estimated to be 24 ps to 0.24 ns. Improved junction electrical characteristics were achieved using MBE deposition on GaN buffers grown by MOCVD. NiAu ohmic contacts were also made to p-GaN with specific contact resistances less than 10−4 Ω·cm2.
28 citations
TL;DR: It is found that the built-in potential becomes negative under a forward bias voltage range where field-induced TMD p-n junctions have been operated as light-emitting diodes and well reproduced the circularly polarized electroluminescence from the WSe2 p- n junction.
Abstract: Electric field-induced p–n junctions are often used to realize peculiar functionalities in various materials. This method can be applied not only to conventional semiconductors but also to carbon nanotubes, graphene, and organic semiconductors to which the conventional chemical doping method is difficult to apply. Transition-metal dichalcogenides (TMDs) are one of such materials where the field-induced p–n junctions play crucial roles in realizing solar cell and light-emitting diode operations as well as circularly polarized electroluminescence. Although the field-induced p–n junction is a well-established technique, many of its physical properties are left to be understood because their doping mechanism is distinct from that of conventional p–n junctions. Here we report a direct electrical measurement of the potential variation along the field-induced p–n junction using multiple pairs of voltage probes. We detected the position of the junction, estimated the built-in potential, and monitored the effect o...
28 citations