p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.

Transistor having an asymmetric source/drain and halo implantation region and a method of forming the same

Abstract: By providing an asymmetric design of a halo region and extension regions of a field effect transistor, the transistor performance may significantly be enhanced for a given basic transistor architecture. In particular, a large overlap area may be created at the source side with a steep concentration gradient of the PN junction due to the provision of the halo region, whereas the drain overlap may be significantly reduced or may even completely be avoided, wherein a moderately reduced concentration gradient may further enhance the transistor performance.

Integrated edge structure for high voltage semiconductor devices and related manufacturing process

Abstract: An integrated edge structure for a high voltage semiconductor device comprising a PN junction represented by a diffused region of a first conductivity type extending from a semiconductor device top surface is described. The edge structure comprises a first, lightly doped ring of the first conductivity type obtained in a first, lightly doped epitaxial layer of a second conductivity type and surrounding said diffused region, and a second, lightly doped ring of the first conductivity type, comprising at least one portion superimposed on and merged with said first ring, obtained in a second, lightly doped epitaxial layer of the second conductivity type grown over the first epitaxial layer.

Electroluminescent junction semiconductor with controllable combination colors

Abstract: An electroluminescent PN junction gallium phosphide diode is fabricated with the P-type zone rich in zinc oxygen pairs and the N-type zone rich in isoelectronic nitrogen. In this diode, the apparent color of the emitted light can be controlled by varying the electrical current in the diode, from the red through the yellow to the green portions of the color spectrum. Thereby, an electroluminescent diode device is afforded, having a threefold (or more) positive standby signal characteristic.

Efficiency calculations for thin-film polycrystalline semiconductor p-n junction solar cells

Abstract: Numerical calculations have been made of the effect of grain size on the short-circuit current and the AM1 efficiency of polycrystalline thin-film GaAs and InP (2 µm thick) and silicon (25 µm thick) p-n junction solar cells. Junction solar cells are seen to be more efficient than Schottky-barrier cells, due to the higher dark current associated with Schottky diodes. GaAs shows the highest efficiency and both GaAs and InP attain 90 percent of their maximum efficiencies at a grain size of 10 µm, while silicon requires grain sizes of 200 µm to attain 90 percent of maximum efficiency. However, the deleterious effect of poor lifetimes and mobilities is less for silicon polycrystalline cells than for the direct-bandgap devices.

Enhancement of minority carrier transport in forward biased GaN p-n junction

Abstract: Forward bias application to a GaN p-n junction (current density ~12 A/cm2) leads to a 1.6-fold increase in the minority electron diffusion length in the p-layer of an epitaxial p-n structure. The effect persists for several days, and is likely associated with electron injection-induced charging of Mg-related deep levels in p-type GaN.