p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.

Effect of surface recombination and channel on P-N junction and transistor characteristics

Abstract: The current flowing in a semiconductor junction may be divided into four components according to the location of the recombination and generation of electrons and holes. These are: 1) the bulk recombination-generation or the diffusion current, 2) the bulk recombination-generation current in the transition region, 3) the surface recombination-generation current in the transition region, and 4) the surface channel current. The current-voltage relationship for these four current components may be approximated by I = I_{s} \exp (qV/mkT) , if V > 4kT/q . Analysis shows that the reciprocal slope m for the current components 1) to 3) lies between 1 and 2, while for the surface channel current component 4) m is greater than 2 for silicon junctions and may be more than 4 for large channels. The theoretical expressions for these four current components are tested with extensive experimental data taken on silicon junctions and found to account for all of the observed current-voltage characteristics. The importance of surface recombinations and surface channels on the current gain of silicon transistor is also demonstrated experimentally. The experimental data are in accord with the theoretical prediction based on the transistor current equations which include the carrier recombination in the emitter junction and the carrier generation in the collector junction.

Hybrid Si Microwire and Planar Solar Cells: Passivation and Characterization

Abstract: We report an efficient hybrid Si microwire (radial junction) and planar solar cell with a maximum efficiency of 11.0% under AM 1.5G ill;umination. The maximum efficiency of the hybrid cell is improved from 7.2% to 11.0% by passivating the top surface and p–n junction with thin a-SiN:H and intrinsic poly-Si films, respectively, and is higher than that of planar cells of the identical layers due to increased light absorption and improved charge-carrier collections in both wires and planar components.

Semiconductor laser having a structure of photonic bandgap material

Abstract: Disclosed is a semiconductor laser that is constituted by at least one active layer sandwiched between two confinement layers with P and N type doping to constitute a PN junction. In at least one of the confinement layers and/or the active layer, holes are designed on each side of the cavity so as to form structures of photonic bandgap material along the lateral walls of the cavity and the ends of the cavity.

p–n junction CuO/BiVO4 heterogeneous nanostructures: synthesis and highly efficient visible-light photocatalytic performance

Abstract: A new strategy via coupling a polyol route with an oxidation process has been developed to successfully synthesize p–n junction CuO/BiVO4 heterogeneous nanostructures. The experimental results reveal that the as-prepared p–n junction CuO/BiVO4 heterogeneous nanostructures exhibit much higher visible-light-driven photocatalytic activity for the degradation of model dye rhodamine B (RhB) than the pure BiVO4 nanocrystals. The photocatalytic degradation rate (C/C0) of the RhB for p–n junction CuO/BiVO4 heterogeneous nanostructures is about two times higher than that of pure BiVO4 nanocrystals. The enhanced photocatalytic efficiency is attributed to a large number of p–n junctions in CuO/BiVO4 heterogeneous nanostructures, which effectively reduces the recombination of electrons and holes by charge transfer from n-type BiVO4 to the attached p-type CuO nanoparticles. This work not only provides an efficient route to enhance the visible-light-driven photocatalytic activity of BiVO4, but also offers a new strategy for fabricating p–n junction heterogeneous nanostructure photocatalysts, which are expected to show considerable potential application in solar-driven wastewater treatment and water splitting.