Topic
p–n junction
About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.
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TL;DR: In this paper, the potential distribution across the cleaved end face of a forward-biased GaAs pn junction was simultaneously mapped with its surface topography, and the space charge region along the interface was clearly visible at zero bias or small forward bias voltages.
Abstract: The potential distribution across the cleaved end face of a forward‐biased GaAs pn junction was simultaneously mapped with its surface topography. The space‐charge region along the interface is clearly visible at zero bias or small forward bias voltages.
27 citations
TL;DR: In this article, surface-acoustic-wave-driven transport is demonstrated by peaks in the electrical current and light emission from the GaAs quantum well at the resonant frequency of the transducer.
Abstract: The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular beam epitaxy regrowth of a modulation doped GaAs∕AlGaAs quantum well on a patterned GaAs substrate. Surface-acoustic-wave-driven transport is demonstrated by peaks in the electrical current and light emission from the GaAs quantum well at the resonant frequency of the transducer. This type of junction offers high carrier mobility and scalability. The demonstration of surface-acoustic-wave luminescence is a significant step towards single-photon applications in quantum computation and quantum cryptography.
27 citations
TL;DR: In this paper, the Schottky barrier of Pd on liquid phase epitaxy grown n-type GaP and a p+ over n junction grown by metalorganic chemical vapor deposition were reported.
Abstract: There is a need for semiconductor junctions with very low leakage for energy conversion from low level radioactive or radio‐luminescent sources, and low noise blue‐green photodiodes. We report the properties of two types of GaP junctions; a Schottky barrier of Pd on liquid phase epitaxy grown n‐type GaP and a p+ over n junction grown by metal‐organic chemical vapor deposition. Both types of junctions show very low leakage currents and good efficiency for power conversion from low level beta particles, x rays, and blue‐green light.
27 citations
TL;DR: In this article, a correct interpretation of pn junction currentvoltage and pulsed MOS capacitance-time data allows space-charge region width dependent generation parameters to be separated from bulk controlled recombination parameters.
Abstract: A correct interpretation of pn junction current-voltage and pulsed MOS capacitance-time data allows space-charge region width dependent generation parameters to be separated from bulk controlled recombination parameters. This is very important for the correct extraction of generation lifetime and minority carrier diffusion length, especially for intrinsically gettered devices where the recombination center density varies through the device. Methods to do this are discussed in this paper.
27 citations