p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.

Method to improve the linearity of the silicon Mach-Zehnder optical modulator by doping control

Abstract: We optimize the linearity performance of silicon carrier-depletion Mach-Zehnder optical modulator through controlling the doping concentration. The optical field distribution in the waveguide is a Gaussian-like distribution. As the doping concentration increases, the dynamic depletion width of the PN junction under the same modulation signal will decrease, and the integration width of the overlap between the Gaussian-like optical field distribution and the depletion region will become smaller. Therefore the modulated signal has less nonlinear components. Our simulation results proved this analysis. We also fabricated different devices with different doping concentrations. By adopting a ten times doping concentration, the spurious free dynamic range (SFDR) for third-order intermodulation distortion (TID) increases from 109.2 dB.Hz2/3 to 113.7 dB.Hz2/3 and the SFDR for second harmonic distortion (SHD) increases from 87.6 dB.Hz1/2 to 97.5 dB.Hz1/2 at a driving frequency of 2 GHz. When the driving frequency is 20 GHz, the SFDRs for TID and SHD distortions are 110.3 dB.Hz2/3 and 96 dB.Hz1/2, respectively.

Silicon p-n junction photodiodes sensitive to ultraviolet radiation

Abstract: Experimental studies on a silicon photodiode have been carried out to achieve the performance characteristics required for applications such as spectroscopic measurements Sheet resistance was applied as a control parameter for diffusion to obtain a shallow junction less than 1 µm in depth For high ultraviolet responsivity, the diffusion layer, in which a built-in field is induced by the impurity gradient, was optimized for values of the sheet resistance of about 800-2000 Ω/□ The device responded in the wavelength range of 200-1000 nm,and had a responsivity of 0065 A/W at 200 nm In order to reduce influence of stray light in spectroscopic measurements, two types of photodiodes were fabricated with photoresponse reduced in the long-wavelength portion A p+-n-p+device was found preferable to a p+-n-n+device And the device structure with an extended electrode was desirable for high, reliable performance

High current density carbon-doped strained-layer GaAs (p+)-InGaAs(n+)-GaAs(n+) p-n tunnel diodes

Abstract: Data are presented showing that a GaAs p‐n tunnel diode can be modified, and improved, with the introduction of an InxGa1−xAs layer (Lz∼100 A) in the barrier region to reduce the energy gap (and carrier mass) and increase the tunneling probability without sacrificing the high injection barrier and voltage of GaAs. Peak tunnel current densities in the range (1–1.5)×103 A/cm2 are obtained, with peak‐to‐valley current ratios of ∼20:1 and voltage ‘‘swings’’ from peak tunnel current to equal injection current of ≳1 V (≤1 V for GaAs). The C‐doped GaAs(p+)‐InGaAs(n+)‐GaAs(n+) diodes are grown by metalorganic chemical vapor deposition and are compared to GaAs tunnel diodes fabricated by the usual alloy process (i.e., local liquid phase epitaxy).

Semiconductor laser device and its manufacture

Abstract: PURPOSE:To make it possible to have a stable transverse mode and high output operation by making the third clad layer, an optical guide layer, a contact layer, the second clad layer which is a region directly under the optical guide layer and an active layer to be of the first conductivity type and the other regions be of the second conductivity type while making the width of a forbidden band near the resonator end face of the active layer be larger than in its inside. CONSTITUTION:In the region distant from the ridge part of an optical guide layer 8, a conductivity type of each layer in the vertical direction to a substrate 1 is in the order of npnp from the side of the substrate 1. Accordingly, when voltage is impressed so that a p-electrode 10 may be positive (+) and an n-electrode 11 may be negative (-), pn junction between a clad layer 5 and a current block layer 6 becomes a reverse bias so that not a current flows in this region. On the contrary, since a contact layer 7 and the optical guide layer 8 are linked together through a p-type diffusion region 9 in the vicinity of the optical guide layer 8, holes are injected from a clad layer 4a to an active layer 3a and electrons are implanted from a clad layer 2 to the active layer 3a in the lower part of the optical guide layer 8 for causing luminescence due to recombination of electrons and holes.