Topic
p–n junction
About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.
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TL;DR: In this paper, the diffusion coefficient of the dopant was analyzed in a multilayer structure for the production of a p -n -junction during annealing radiative defects, and the analysis was done analytically by using a development of the method of averaging functional correction.
26 citations
TL;DR: The characteristic transport behavior of the photosensitive graphene p-n junction opens new possibilities for graphene-based devices, and the results are used to fabricate ternary inverters.
Abstract: We investigate the electric transport in a graphene–organic dye hybrid and the formation of p–n junctions. In the conventional approach, graphene p–n junctions are produced by using multiple electrostatic gates or local chemical doping, which produce different types of carriers in graphene. Instead of using multiple gates or typical chemical doping, a different approach to fabricate p–n junctions is proposed. The approach is based on optical gating of photosensitive dye molecules; this method can produce a well-defined sharp junction. The potential difference in the proposed p–n junction can be controlled by varying the optical power of incident light. A theoretical calculation based on the effective medium theory is performed to thoroughly explain the experimental data. The characteristic transport behavior of the photosensitive graphene p–n junction opens new possibilities for graphene-based devices, and we use the results to fabricate ternary inverters. Our strategy of building a simple hybrid p–n junc...
26 citations
TL;DR: In this article, MeH-PPV on top of heavily doped n-type silicon was used in electrical measurements, and four traps (two majority and two minority traps) could be identified on the shallow acceptor level responsible for conduction.
26 citations
Patent•
28 Mar 1985TL;DR: In this paper, a junction semiconductor light-emitting element consisting of a flat portion, a columnar projection, and electrodes provided on both sides of the flat portion was proposed.
Abstract: A junction semiconductor light-emitting element consists of a flat portion, a columnar projection provided on one surface of the flat portion, and electrodes provided on both sides of the flat portion. The columnar projection has therein a PN junction extending at right angles to the flat portion, and the flat portion a PN junction extending in parallel therewith. This light-emitting element is formed so that, when a predetermined voltage is applied between these electrodes, a larger quantity of electric current is injected into the PN junction in the columnar projection than into the PN junction in the flat portion. This light-emitting element is capable of being oscillated continuously with ease at room temperature. The light-emitting element according to this invention easily enables a two-dimensional arrangement and highly-advanced integration. If optical detectors and saturable light-absorbing layers are integrated in the direction of the thickness of the light-emitting element, various types of high-degree optically-functioning devices can be obtained.
26 citations
Patent•
18 Nov 1966TL;DR: The injection-luminescent diodes of gallium arsenide, gallium phosphide and mixed binary crystals thereof having the formula GaAsxP1 x, where x is a numerical value greater than zero and less than one, having an N-type conductivity region doped to a carrier concentration of from 1015 to 1019 carriers/cc.
Abstract: This disclosure relates to injection-luminescent diodes of gallium arsenide, gallium phosphide and mixed binary crystals thereof having the formula GaAsxP1 x, where x is a numerical value greater than zero and less than one, said diodes having an N-type conductivity region doped to a carrier concentration of from 1015 to 1019 carriers/cc. of N-type impurity atoms and a substantially linearly graded PN junction merging with a radiative recombination band which extends from about 5 to 25 microns into a region of P-type conductivity and is doped with Ptype impurity atoms to a carrier concentration of about 4 X 1019 carriers/cc. at the distal edge of said band from the PN junction. The injection-luminescent diodes of this invention are produced by a diffusion process.
25 citations