Topic
p–n junction
About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.
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TL;DR: In this article, a new method for the optical cross-section measurement of deep levels in junctions is presented, based on the measurement of the capacitance and conductance of the junction under illumination, as a function of the photon energy and the frequency of the measuring signal.
Abstract: A new method for the optical cross‐section measurement of deep levels in junctions is presented. It is based on the measurement of the capacitance and conductance of the junction under illumination, as a function of the photon energy hν and the frequency of the measuring signal. This technique has been applied to the measurement of the optical capture cross section σon of the Au acceptor level corresponding to the emission of electrons to the conduction band.
25 citations
Patent•
04 Apr 2002
TL;DR: In this paper, a semiconductor device has a PN junction between first and second regions of the device in which reverse breakdown of the junction occurs, and a plurality of separate regions of small area arranged so that reverse breakdown preferentially occurs through the second buried region.
Abstract: A semiconductor device has a PN junction between first and second regions of the device in which in the intended operation of the device reverse breakdown of the junction occurs. The first region is of lower impurity concentration than the second region and a first buried region of the same conductivity type as and of higher impurity concentration than the first region is provided in the first region adjacent to the junction. A second buried region of the same conductivity type as and of higher impurity concentration than the first buried region is provided in the first buried region and one of the first and second buried regions is formed with a plurality of separate regions of small area arranged so that reverse breakdown of the junction preferentially occurs through the second buried region.
25 citations
TL;DR: In this article, a potential calculation was performed to detect asymmetric depletion layer formation in Cs/I@SWNTs and cs/C60@SW NTs, respectively.
Abstract: Ultimate one-dimensional heterojunctions of electron donor and acceptor materials have been realized within the inner hollow space of a single-walled carbon nanotube (SWNT). The heterojunction structures of Cs/I and Cs/C60 inside SWNTs (Cs/I@SWNTs, Cs/C60@SWNTs) yield the air-stable rectifying performance. Clear tunneling currents through the p-n junction barrier could be also detected only for Cs/I@SWNTs, which is explained by the difference of depletion layer structures. Based on a potential calculation, symmetrical and asymmetrical depletion layers were found to be formed in Cs/I@SWNTs and Cs/C60@SWNTs, respectively. Low temperature measurements also supply evidence of asymmetric depletion layer formation in Cs/C60@SWNTs.
25 citations
TL;DR: In this paper, it was shown that the controversy concerning the relation of the applied potential difference to the difference across the space-charge region of a P -N -junction is due to a neglect of the non-zero gradients of the electrochemical potentials.
Abstract: The purpose of this paper is to show that the controversy concerning the relation of the applied potential difference to the difference across the space-charge region of a P - N -junction is due to a neglect of the non-zero gradients of the electrochemical potentials. By incorporating these quantities and by a suitable modification of the Fletcher boundary conditions, the inconsistencies discovered by Van Vliet and Gummel can be removed.
25 citations
TL;DR: In this paper, Boron-doped homoepitaxial layers have been selectively grown on synthetic type Ib substrates of (100) cut, and Ohmic contacts were formed by evaporating a Mo/Pt/Au sandwich and subsequent annealing at 950°C for h. Currentvoltage characteristics of diode type could be taken in vacuum in the temperature range 360-900°C.
Abstract: Boron‐doped homoepitaxial layers have been selectively grown on synthetic type Ib substrates of (100) cut. Ohmic contacts were formed by evaporating a Mo/Pt/Au sandwich and subsequent annealing at 950°C for h. Current–voltage characteristics of diode type could be taken in vacuum in the temperature range 360–900 °C. Green light emission due to electroluminescence was observed from the junction area showing a maximum at a wavelength of 534 nm corresponding to a photon energy of 2.32 eV. The normalized emission spectrum was measured over the temperature range 320–440 °C with the device in air and was found independent of temperature and boron concentration.
25 citations