p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.

Selective Metal Deposition on Silicon Substrates

Abstract: In order to delineate n/p junctions at (100) or cleaved Si faces, different plating processes (electroless in the dark or under illumination with photons of different energy) have been investigated. The effects of metal cation concentration, of illumination upon the formation of deposits onto n‐ or p‐type silicon substrates, and p/n Si junctions have been studied. The role of an interfacial oxide layer has been emphasized. It is shown that platinum or palladium electroless deposition can be carried out on p‐Si under ultraviolet illumination, in solutions free of . By contrast, in presence of a Si p/n junction, platinum, and palladium are only deposited on n‐type areas. Models are proposed to explain the observed selective deposition.

Recovery Currents in Germanium p — n Junction Diodes

Abstract: When a germanium p — n junction biased in the forward direction has a reverse voltage suddenly applied, a large transient current flows during the ``recovery time.'' A proposed mechanism for this current involving diffusion of stored minority carriers to the barrier is compared with experimental results. Since the current is related to the diode forward direction characteristics these are examined. Finally a variable time delay utilizing the recovery current effect is discussed.

Photo cells, photo cell arrays, and electrolytic devices using these cells and arrays

Abstract: A photo cell and a photo cell array which have high photoelectric conversion efficiency, little leakage current, long life, and high reliability, as well as a electrolytic device that employs the cell and array. The photo cell (1) comprises: a base material (2) consisting of p-type semiconductor; a light receiving section (3) being an integral spherical part of the base material (2) which protrudes outward from the surface of the base (2), and has an n-type semiconductor layer formed on the surface of said spherical part, so that a pn junction interface is formed between the base material (2) and the semiconductor layer; a front surface electrode (4) formed from conductive material in ohmic contact with a portion of the surface of the aforementioned sphere; and a lower or back electrode (5) formed from conductive material on the bottom of the aforementioned base material (2), to provide ohmic contact. The spherical shape of the photo cell (1) enables most of the surface of the sphere to be sensitive to light, with wider directivity than flat photo cells, and enables uniform sensitivity regardless of direction.

Nano-Heterojunction Photocatalytic Materials in Environmental Pollution Controlling

Abstract: Nano2heterojunctions , which integrate the advantages of nano2materials and heterojunctions , have attracted wide interests in many areas. In environmental pollution controlling area , nano2heterojunctions possess the potential application , because they can overcome the two obstacles of TiO2 photocatalyst : the dissatisfactory quantum efficiency and the neglectable utilization of visible light . This review introduces the basic mechanism of nano2 heterojunction related to environmental pollution controlling , including the driving force of inner electric field to photogenerated charge separation and its active region , the effect of illumination , the thickness of top semiconductor , energy bands and structure type on photogenerated2charge2separation mode of heterojunction. The progress of pn junction , nn junction , Schottky junction , and heterojunctions of semiconductor with carbon materials in environmental pollution controlling is summarized. The future developing perspectives are also presented.