Topic
p–n junction
About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.
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Patent•
21 May 2015TL;DR: In this article, a semiconductor device is defined as a set of device cells, where each cell includes a drift region, a source region, and a body region arranged between the source and drift regions; a diode region and a pn junction between the diode and drift region; a trench having a first sidewall, a second sidewall opposite the first and a bottom; a gate electrode in the trench and dielectrically insulated from the body, diode, etc.
Abstract: A semiconductor device includes a semiconductor body and at least one device cell integrated in the semiconductor body. Each device cell includes: a drift region, a source region, and a body region arranged between the source and drift regions; a diode region and a pn junction between the diode and drift regions; a trench having a first sidewall, a second sidewall opposite the first sidewall, and a bottom, the body region adjoining the first sidewall, the diode region adjoining the second sidewall, and the pn junction adjoining the bottom; a gate electrode in the trench and dielectrically insulated from the body, diode and drift regions by a gate dielectric. The diode region has a lower diode region arranged below the trench bottom, and the lower diode region has a maximum of a doping concentration distant to the trench bottom. A corresponding method of manufacturing the device also is provided.
25 citations
TL;DR: In this paper, an abrupt heterojunction photodetector based on Hg1−−xCdxTe (MCT) has been simulated theoretically for mid-infrared applications.
25 citations
Patent•
27 Jun 2012
TL;DR: In this paper, a reliable nitride semiconductor light emitting device and a method of manufacturing the same are provided in which short-circuit at the PN junction portion and current leak is reduced as compared with the conventional examples.
Abstract: A nitride semiconductor light emitting device includes a conductive substrate, a first metal layer, a second conductivity-type semiconductor layer, an emission layer, and a first conductivity-type semiconductor layer in this order. The nitride semiconductor light emitting device additionally has an insulating layer covering at least side surfaces of the second conductivity-type semiconductor layer, the emission layer and the first conductivity-type semiconductor layer. A method of manufacturing the same is provided. The nitride semiconductor light emitting device may further include a second metal layer. Thus, a reliable nitride semiconductor light emitting device and a method of manufacturing the same are provided in which short-circuit at the PN junction portion and current leak is reduced as compared with the conventional examples.
25 citations
Patent•
31 Mar 1972TL;DR: In this article, a high impedance, junction thermistor for sensing temperatures from about -200*C to above 1,400*C is provided with a semiconductor body of silicon carbide.
Abstract: A high impedance, junction thermistor for sensing temperatures from about -200*C. to above 1,400*C. is provided with a semiconductor body of silicon carbide. The silicon carbide semiconductor body has at least first and second impurity regions forming a PN junction therebetween. The temperature is sensed by the impedance response across the PN junction.
25 citations
Patent•
Rohm1
TL;DR: In this article, an epitaxial growth of a semiconductor layer on the surface of a wafer not provided with mirror finishing and having irregularity, introducing impurities having different conductivity type, and further providing rapid thermal anneal by rapid heating-up and rapid cooling-down in any step in the manufacturing process.
Abstract: The present invention is characterized by providing epitaxial growth of a semiconductor layer on the surface of a wafer not provided with mirror finishing and having irregularity, introducing impurities having different conductivity type in the epitaxially grown semiconductor layer to form at least a pn junction, and further providing rapid thermal anneal by rapid heating-up and rapid cooling-down in any step in the manufacturing process By so processing, there can be obtained a semiconductor device having high speed switching characteristics in stable manner without causing problems in manufacturing process such as diffusion of heavy metal or irradiation of corpuscular ray
25 citations