Topic
p–n junction
About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.
Papers published on a yearly basis
Papers
More filters
TL;DR: A high responsivity self-powered solar-blind deep UV (DUV) photodetector with high rejection ratio based on inorganic/organic hybrid p-n junction based on high crystalized β-Ga2O3 and excellent transparent conductive polymer PEDOT:PSS is proposed.
Abstract: A high responsivity self-powered solar-blind deep UV (DUV) photodetector with high rejection ratio was proposed based on inorganic/organic hybrid p–n junction. Owing to the high crystallized β-Ga2O...
99 citations
TL;DR: In this article, a two-step electrode process on p-GaN and characteristics of GaN p-n junction diodes on free-standing GaN substrates with low specific ON-resistance Rοn and high breakdown voltage VB were described.
Abstract: This letter describes a new two-step electrode process on p-GaN and characteristics of GaN p-n junction diodes on free-standing GaN substrates with low specific ON-resistance Rοn and high breakdown voltage VB. We develop a two-step process for anode electrodes in order to avoid plasma damage to the p+-GaN contact layer during the sputtering process. The specific ON-resistance is further improved due to a new low-damage process. The breakdown voltage of the diodes with the field-plate (FP) structure is over 1100 V, and the leakage current was low, i.e., in the range of 10-9 A. The specific ON-resistance of the diodes of 50 μm in diameter with the FP structure was 0.4 mΩ · cm2. Baliga's figure of merit (VB2/Ron) of 3.0 GW/cm2 is obtained. These are the best values ever reported among those achieved by GaN p-n junction diodes on free-standing GaN substrates.
99 citations
TL;DR: In this article, a thin epitaxially grown Si layer is used as the high-k dielectric to obtain low interface state density and high carrier mobility for Ge MOSFETs.
98 citations
TL;DR: In this paper, the authors examined optical absorption processes for applications of infrared lasers to the simulation of single-particle effects in silicon and GaAs, which require that the laser is focused to a small area on the device surface.
Abstract: The author examines optical absorption processes for applications of infrared lasers to the simulation of single-particle effects in silicon and GaAs, which require that the laser is focused to a small area on the device surface. The resulting charge generation is compared with charge generation from heavy ions. Charge funneling is reduced in silicon structures because of the lower charge density unless the LET (linear energy transfer) is above a threshold value. In both materials, the effective LET of a laser is inherently nonlinear because of nonlinear absorption at high intensities. These factors limit quantitative comparisons between lasers and heavy ions, and are increasingly important as devices are scaled to smaller dimensions. >
98 citations
98 citations