p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.

Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser

Abstract: We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes (LEDs) on highly strained germanium (Ge) membranes. An external stressor technique was employed to introduce a 0.76% bi-axial tensile strain in the active region of a vertical PN junction. Electrical measurements show an on-off ratio increase of one order of magnitude in membrane LEDs compared to bulk. The EL spectrum from the 0.76% strained Ge LED shows a 100 nm redshift of the center wavelength because of the strain-induced direct band gap reduction. Finally, using tight-binding and finite-difference time domain simulations, we discuss the implications for highly efficient Ge lasers.

Novel Cu 3 P/g-C 3 N 4 p-n heterojunction photocatalysts for solar hydrogen generation

Abstract: Developing efficient heterostructured photocatalysts to accelerate charge separation and transfer is crucial to improving photocatalytic hydrogen generation using solar energy. Herein, we report for the first time that p-type copper phosphide (Cu 3 P) coupled with n-type graphitic carbon nitride (g-C 3 N 4 ) forms a p-n junction to accelerate charge separation and transfer for enhanced photocatalytic activity. The optimized Cu 3 P/g-C 3 N 4 p-n heterojunction photocatalyst exhibits 95 times higher activity than bare g-C 3 N 4 , with an apparent quantum efficiency of 2.6% at 420 nm. A detail analysis of the reaction mechanism by photoluminescence, surface photovoltaics and electrochemical measurements revealed that the improved photocatalytic activity can be ascribed to efficient separation of photo-induced charge carriers. This work demonstrates that p-n junction structure is a useful strategy for developing efficient heterostructured photocatalysts.

Semiconductor optical device with nanowhiskers

Abstract: A semiconductor light-emitting device includes a plurality of semiconductor rods, each of which has a pn junction. The semiconductor rods are formed on a semiconductor substrate such that the plurality of semiconductor rods are arranged at a distance substantially equal to an integer multiple of the wavelength of light emitted from the semiconductor rod. With such devices, various novel optical devices such as a micro-cavity laser of which the threshold current is extremely small and a coherent light-emitting device having no threshold value can be realized.

Electrical properties of ion-implanted p-n junction diodes in β-SiC

Abstract: Mesa structure junction diodes prepared via high‐temperature ion implantation of Al+ (100 keV, 4.8×1014 Al/cm2) in n‐type or N+ (90 and 180 keV, 0.9 and 1.3×1014 N/cm2) in p‐type β‐SiC thin films were electrically characterized as a function of temperature using current‐voltage and capacitance‐voltage measurements. In either case, rectification was observed to the highest measurement temperature of 673 K. Closer examination of the device current‐voltage characteristics yielded diode ideality factors greater than 2. Additionally, the log dependence of these two parameters indicated space‐charge‐limited current in the presence of traps as the dominant conduction mechanism. From the temperature dependence of log‐log plots, trap energies and densities were determined. Two trapping levels were observed: (1) 0.22 eV with a density of 2×1018 cm−3 and (2) 0.55 eV with a density of 2×1016 cm−3. The former is believed to be ionized Al centers (in the case of Al‐implanted sample) and the latter a compensating accept...