p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.

High Performance Nanostructured Silicon–Organic Quasi p–n Junction Solar Cells via Low-Temperature Deposited Hole and Electron Selective Layer

Abstract: Silicon–organic solar cells based on conjugated polymers such as poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) on n-type silicon (n-Si) attract wide interest because of their potential for cost-effectiveness and high-efficiency. However, a lower barrier height (Φb) and a shallow built in potential (Vbi) of Schottky junction between n-Si and PEDOT:PSS hinders the power conversion efficiency (PCE) in comparison with those of traditional p–n junction. Here, a strong inversion layer was formed on n-Si surface by inserting a layer of 1, 4, 5, 8, 9, 11-hexaazatriphenylene hexacarbonitrile (HAT-CN), resulting in a quasi p–n junction. External quantum efficiency spectra, capacitance–voltage, transient photovoltage decay and minority charge carriers life mapping measurements indicated that a quasi p–n junction was built due to the strong inversion effect, resulting in a high Φb and Vbi. The quasi p–n junction located on the front surface region of silicon substrates improved the short wavelen...

Synthesis and enhanced H2S gas sensing properties of α-MoO3/CuO p–n junction nanocomposite

Abstract: One-dimensional (1D) α-MoO3/CuO nanocomposite has been synthesized via a simple method. This nanocomposite consists of n-type α-MoO3 nanorods decorated with p-type CuO nanoparticles, leading to the formation of p–n junctions at their interfaces. The p–n junction nanocomposite exhibits great enhanced H2S gas sensing properties, compared to pristine α-MoO3 nanorods. The sensor response of this nanocomposite is up to 272.0–10 ppm H2S gas at the optimal working temperature (270 °C), which is 53.3 times higher than that of α-MoO3 nanorods. More importantly, even at 100 °C, α-MoO3/CuO p–n junction nanocomposite still has very strong response to 5 ppm H2S gas. In addition, the nanocomposite sensors have a very good selectivity to H2S gas. Such enhanced H2S sensing performances are attributed to the disappearance of p–n junctions, which can be proved by the fact that crystalline CuO nanoparticles are converted into amorphous CuS ones after the nanocomposite is exposed to H2S gas.

Electroluminescence from sulfur impurities in a p‐n junction formed in epitaxial silicon

Abstract: We characterize the behavior of electroluminescence from a sulfur‐related impurity complex in a p‐n junction formed in epitaxial silicon. The spectrum of the electroluminescence matches that of previously reported photoluminescence from sulfur impurities and persists to ∼150 K. In our structure, we find that the electroluminescence exhibits an external quantum efficiency of 0.2–0.5%.

Formation of definite GaN p–n junction by Mg-ion implantation to n−-GaN epitaxial layers grown on a high-quality free-standing GaN substrate

Abstract: P-type conversion of n−-GaN by Mg-ion implantation was successfully performed using high quality GaN epitaxial layers grown on free-standing low-dislocation-density GaN substrates. These samples showed low-temperature PL spectra quite similar to those observed from Mg-doped MOVPE-grown p-type GaN, consisting of Mg related donor–acceptor pair (DAP) and acceptor bound exciton (ABE) emission. P–n diodes fabricated by the Mg-ion implantation showed clear rectifying I–V characteristics and UV and blue light emissions were observed at forward biased conditions for the first time.