Topic
p–n junction
About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.
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TL;DR: In this article, NiO functionalized Mo doped BiVO4 (denoted as NiO/Mo:BiVO4) nanobelts and their enhanced photoelectrochemical activity for efficient water oxidation were reported.
70 citations
69 citations
TL;DR: In this paper, the dopant diffusion in p-n-junction in heterostructure was analyzed by solving the diffusion equation with space-varying diffusion coefficient, and the optimum annealing time was found to decrease the thickness and to increase the homogeneity of impurity concentration in p or n regions.
Abstract: We analyze the dopant diffusion in p-n-junction
in heterostructure, by solving the diffusion equation with
space-varying diffusion coefficient. For a step-wise spatial
distribution we find the optimum annealing time to decrease the
p-n-junction thickness and to increase the homogeneity of
impurity concentration in p or n regions.
69 citations
TL;DR: The electrochemical fabrication of a polyacetylene pn homojunction based on internally compensated forms where the dopant counterions are covalently bound to the polymer backbone is reported.
Abstract: Dopant counterion diffusion has made the conjugated polymer pn homojunction a challenging target for decades. We report the electrochemical fabrication of a polyacetylene pn homojunction based on internally compensated forms where the dopant counterions are covalently bound to the polymer backbone. After drying under vacuum, the pn junction exhibits diode behavior with the ratio of the forward to reverse current at 2 V being 7. Despite such modest diode behavior, the fabricated pn junction is significant because it demonstrates the utility of internal compensation in the fabrication of metastable interfaces between dissimilarly doped conjugated polymers.
69 citations
TL;DR: High quality p-n junctions based on 2D layered materials (2DLMs) are urgent to exploit, because of their unique properties such as flexibility, high absorption, and high tunability which may be utilized in next-generation photovoltaic devices.
Abstract: High quality p-n junctions based on 2D layered materials (2DLMs) are urgent to exploit, because of their unique properties such as flexibility, high absorption, and high tunability which may be utilized in next-generation photovoltaic devices. Based on transfer technology, large amounts of vertical heterojunctions based on 2DLMs are investigated. However, the complicated fabrication process and the inevitable defects at the interfaces greatly limit their application prospects. Here, an in-plane intramolecular WSe2 p-n junction is realized, in which the n-type region and p-type region are chemically doped by polyethyleneimine and electrically doped by the back-gate, respectively. An ideal factor of 1.66 is achieved, proving the high quality of the p-n junction realized by this method. As a photovoltaic detector, the device possesses a responsivity of 80 mA W-1 (≈20% external quantum efficiency), a specific detectivity of over 1011 Jones and fast response features (200 µs rising time and 16 µs falling time) at zero bias, simultaneously. Moreover, a large open-circuit voltage of 0.38 V and an external power conversion efficiency of ≈1.4% realized by the device also promises its potential in microcell applications.
69 citations