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p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.


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Journal ArticleDOI
TL;DR: A flexible nitride p-n photodiode is demonstrated and the −3 dB cutoff was found to be ∼35 Hz, which is faster than the operation speed for typical photoconductive detectors and which is compatible with UV monitoring applications.
Abstract: A flexible nitride p-n photodiode is demonstrated. The device consists of a composite nanowire/polymer membrane transferred onto a flexible substrate. The active element for light sensing is a vertical array of core/shell p–n junction nanowires containing InGaN/GaN quantum wells grown by MOVPE. Electron/hole generation and transport in core/shell nanowires are modeled within nonequilibrium Green function formalism showing a good agreement with experimental results. Fully flexible transparent contacts based on a silver nanowire network are used for device fabrication, which allows bending the detector to a few millimeter curvature radius without damage. The detector shows a photoresponse at wavelengths shorter than 430 nm with a peak responsivity of 0.096 A/W at 370 nm under zero bias. The operation speed for a 0.3 × 0.3 cm2 detector patch was tested between 4 Hz and 2 kHz. The −3 dB cutoff was found to be ∼35 Hz, which is faster than the operation speed for typical photoconductive detectors and which is c...

69 citations

Book
30 Oct 2003
TL;DR: Kimoto et al. as mentioned in this paper proposed a step-controlled epitaxy of 6H-SiC (0001)-(6x6) reconstruction, which is based on a surface diffusion model.
Abstract: Preface Chapter 1 Epitaxial growth of high-quality silicon carbide - Fundamentals and recent progress - -- T. Kimoto and H. Matsunami* (Kyoto University) (1) Introduction (2) Step-controlled Epitaxy of SiC 2.1 Chemical vapor deposition 2.2 Step-controlled epitaxy 2.3 Surface morphology (3) Growth mechanism of step-controlled epitaxy 3.1 Rate-determining process 3.2 Off-angle dependence of growth rate 3.3 Temperature dependence of growth rate 3.4 Prediction of step-flow growth condition 3.4.1 Surface diffusion model 3.4.2 Desorption flux 3.4.3 Critical supersaturation ratio 3.4.4 Critical growth conditions 3.4.5 Surface diffusion length 3.4.6 Prediction of growth mode (4) Behaviors of steps in SiC epitaxy 4.1 Nucleation and step motion 4.2 Step bunching (5) Characterization of epitaxial layers 5.1 Structural characterization 5.2 Optical characterization 5.3 Electrical characterization (6) Doping of impurities 6.1 Donor doping 6.2 Acceptor doping (7) Recent progress 7.1 Practical epitaxial growth 7.2 Epitaxial growth on (11-20) (8) Concludions References Chapter 2 Surface characterization of 6H-SiC reconstructions -- Kian-Ping LOH, Eng-Soon TOK, and Andrew T. S. WEE* (National University of Singapore) 1. INTRODUCTION 2. Sample preparation methods for characterization of surface reconstruction 3. Reflection High Energy Electron Diffraction (RHEED) 3.1 RHEED system set-up 3.2 RHEED analysis of surface reconstruction on 6H-SiC (0001) 3.3 6H-SiC (0001)-(1'1) reconstruction 3.4 6H-SiC (0001)-(3'3) reconstruction 3.5 6H-SiC(0001)-(6x6) reconstruction 3.6 6H-SiC(0001)-(O3'O3R ) reconstruction 3.7 1'1 graphite-R on 1'1 SiC 3.8 RHEED Rocking beam analysis 4. Scanning Tunneling Microscopy (STM) 4.1 Surface Morphological Evolution of 6H-SiC(0001) 4.2 6H-SiC (0001)-(3'3) reconstruction 4.3 6H-SiC (0001)-(6'6) reconstruction 5. X-ray Photoelectron Spectroscopy (XPS) 6. Auger electron spectroscopy (AES) 7. Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) 8. Conclusions Acknowledgements References Chap ter 3 Exciton and defect photoluminescence from SiC -- T. Egilsson, I.G. Ivanov, N.T. Son, A. Henry, J.P. Bergman, and E. Janzen* (Linkoping University) 1. Introduction 2. Experimental techniques 3. Some properties of sic 4. Electronic structure 4.1. Excitons 4.2. Internal transitions at impurity ions 5. Free excitons 6. Bound excitons 6.1. D-and A-BEs 6.2. I-BEs 7. Internal transitions References Chapter 4 DEEP LEVEL DEFECTS IN SiC MATERIALS AND DEVICES -- A. A. Lebedev* (A. F. Ioffe Physics & Technology Institute) Introduction. 1. Parameters of deep centers in SiC. 1.1. Major doping impurities in SiC 1.2. Other types of impurity centers in SiC 1.3. Intrinsic defects in silicon carbide 1.4. Radiation doping of SiC 2. Influence of impurities on the growth of epitaxial SiC layers 2.1. Heteropolytype SiC epitaxy 2.2. Site-competition epitaxy of SiC 3. Deep centers and recombination processes in SiC. 3.1. A deep centers and radiates recombination in 6H- and 4H-SiC p-n structures. 3.2. Influence of deep centers on the diffusion length and lifetime in 6H-SiC p-n structures 3.3. Deep centers and the negative temperature coefficient for the breakdown voltage in SiC p-n-structures Conclusions References Chapter 5 Ion-implantation in SiC -- Mulpuri V. Rao (George Mason University) (1) Introduction (2) Implant Profile Range Statistics (3) Surface Morphology of Annealed Material (4) Thermal Stability of Implant Depth Profiles (5) Lattice Quality - Rutherford Back-scattering (RBS) (6) Electrical Activation of Donor Implants (7) Electrical Activation of Acceptor Implants (8) Electrical Characteristics of Compensation Implants (9) Other Applications of Ion-implantation (10) Implant Masking (11) Ion-implantation for Device Applications (12) Conclusions References Chapter 6 OHMIC CONTACTS TO SiC FOR HIGH POWER AND HIGH TEMPERATURE DEVICE APPLICATIONS -- M. W. Cole * and P. C. Joshi (U.S. Army Research Laboratory) 1. INTRODUCTION 2. OHMIC CONTACTS TO SiC 2.1. Theory 2.2. Approach 2.3. Considerations and Critical Requirements 3. OHMIC CONTACTS TO n-SiC 3.1. Ti and Ti Based Metallizations 3.2. W and W Based Metallizations 3.3. Ta and Ta Based Metallizations 3.4. Re Contacts 3.5. Pt Contacts 3.6. Cr and Cr Based Metallizations 3.7. Mo and Co Silicide Metallizations 3.8. Ni and Ni Based Metallizations 4. OHMIC CONTACTS TO p-SiC 4.1. Al and Al Based Metallizations 4.2. Ti and Ti Based Metallizations 4.3. Si Based Metallizations 4.4. W and W Based Metallizations 4.5. Pd Contacts 4.6. Pt Contacts 4.7. Ta Contacts 4.8. Os, Mo, and Co Based Metallizations 4.9. B Based Metallizations 5. Conclusions References Chapter 7 SiC Avalanche Breakdown and Avalanche Photodiodes -- Feng Yan* and Jian H. Zhao (Rutgers University) 1. INTRODUCTION 2. AVALANCHE BREAKDOWN 3. ACHIEVING AVALANCHE BREAKDOWN 3.1 Defects detrimental to the avalanche breakdown of SiC 3.2 Yield of devices free of defects 3.3 Edge termination of SiC devices 3.3.1 Positive bevel with a bevel angle as low as 2o 3.3.2 Multi-step junction termination extension (MJTE) 4. DETERMINATION OF IMPACT IONIZATION RATES 4.1 Multiplication factors 4.2 Determination of impact ionization rates from multiplication factors 5. IMPACT IONIZATION RATES 5.1 Impact ionization rates of 6H-SiC 5.2 Impact ionization rates of 4H-SiC 5.3 Criteria of avalanche breakdown 5.4 Critical field and breakdown voltage of 6H-SiC pn junction 5.5 Critical field and breakdown voltage of 4H-SiC pn junction 6. 4H-SIC AVALANCHE PHOTODIODES 6.1 Noise performance of APDs 6.2 Practical consideration in SiC APD design 6.3 4H-SiC APDs edge terminated by the positive bevel 6.4 Reach-through 4H-SiC APDs terminated by MJTE 6.5 4H-SiC APD linear arrays 9. Conclusions References Chapter 8 Porous SiC Technology -- Stephen E. Saddow* (University of South Florida), Marina Mynbaeva (Ioffe Institute) and Michael F. MacMillan (Sterling Semiconductor) 1 Introduction 2 Porous SiC Technology - early works on p-type substrates 2.1 UV Luminescence and LEDS. 2.2 Infrared reflectance of porous SiC layers 2.3 Comparison of Porous SiC Reflectance to Bulk SiC Reflectance 2.4 Comparison of Data to Model Reflectance 2.5 Discussion 3 N-type Porous SiC Technology - early works 3.1 Porous SiC from n-type bulk materials 3.2 Porous layers based on epitaxial n-SiC films 3.3 Optical properties of n-type PSC 3.4 Porous n-type SiC - wafers technology 3.5 Selected properties of PSC 4 Epitaxial growth on Porous SiC 4.1 SiC epitaxial growth on porous SiC substrates - A First Report 4.2 SiC Defect Density Reduction by Epitaxy on Porous Surfaces - LTPL Observations 4.3 Structural Characterization of SiC Epitaxial Layers Grown on PSC - SWBXT and TEM 4.4 Growth of SiC Epitaxial Layers on Porous Surfaces of Varying Porosity 4.5 Scanning Acoustic Microscopy in Porous SiC 4.6 Comparison of Schottky Diode Performance on PSC and Conventional SiC 4.6.1 Schottky diode results and discussion 4.6.2 Schottky Diode Conclusion 5 Conclusions References

69 citations

Journal ArticleDOI
TL;DR: In this article, a simple and effective approach to enhance the piezoelectric output performance of the ZnO NGs by forming a CuO-ZnO heterostructure was reported.
Abstract: The piezoelectric potential screening by large excess electrons in nominally undoped ZnO has limited the energy conversion efficiency of the ZnO nanogenerators (NGs). In this study, we report a simple and effective approach to enhance the piezoelectric output performance of the ZnO NGs by forming a CuO–ZnO heterostructure. By depositing a ZnO thin film on the pre-deposited CuO thin film, which forms a p–n junction, excess electrons in ZnO can be effectively reduced. Thus, the piezoelectric potential generated in ZnO by an applied force can be less affected. Using this approach, we obtained an output voltage up to ∼7.5 V and a maximum current of 4.5 μA cm−2 measured under the forward connection, which is a 7-fold higher output voltage and an approximately one order of magnitude higher current density by comparison to the ZnO NGs without a CuO layer. Our results clearly demonstrate the effectiveness of a CuO–ZnO heterostructure for realizing high performance flexible energy harvesting devices.

69 citations

Journal ArticleDOI
TL;DR: In this article, the main results of a theoretical and experimental study of the optimization of flat doping profile double-drift silicon IMPATT diodes for the realization of reliable CW high-power high-efficiency solid-state oscillators operating in the 94 GHz atmospheric propagation window are presented.
Abstract: The main results of a theoretical and experimental study of the optimization of flat doping profile double-drift silicon IMPATT diodes for the realization of reliable CW high-power high-efficiency solid-state oscillators operating in the 94 GHz atmospheric propagation window are presented. This study has been carried out by means of an IMPATT oscillator model which takes into account the thermal limitation, bias effect, and diode impedance matching. It relies on an accurate p-n junction device drift-diffusion model that includes the heavily doped regions of the collectors. This model has been used to quantify the influence of the various parameters determining the oscillator RF output performance. An explanation of the interesting noise performance of these millimeter-wave IMPATT diodes is proposed. >

69 citations

Journal ArticleDOI
TL;DR: In this article, a technique for the fabrication of shallow, silicided n+−p and p+−n junctions with good electrical characteristics was developed for fabrication of metaloxide-semiconductor field effect transistor.
Abstract: We have developed a technique for the fabrication of shallow, silicided n+−p and p+−n junctions with good electrical characteristics. The technique utilizes the ion implantation of dopants into silicide layers previously formed by ion‐beam mixing with Si ions and low‐temperature annealing, and the subsequent drive‐in of implanted dopants into the Si substrate to form shallow junctions. This technique can be applied to the fabrication of metal‐oxide‐semiconductor field‐effect transistor in a self‐aligned fashion and can have a significant impact on complementary metal‐oxide‐semiconductor devices.

69 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202314
202237
2021116
2020166
2019251
2018203