p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.

Positive temperature coefficient of breakdown voltage in 4H-SiC pn junction rectifiers

Abstract: It has been suggested that once silicon carbide (SiC) technology overcomes some crystal growth obstacles, superior SiC semiconductor devices would supplant silicon in many high-power applications. However, the property of positive temperature coefficient of breakdown voltage, a behavior crucial to realizing excellent power device reliability, has not been observed in 4H-SiC, which is presently the best-suited SiC polytype for power device implementation. This paper reports the first experimental measurements of stable positive temperature coefficient behavior observed in 4H-SiC pn junction rectifiers. This research indicates that robust 4H-SiC power devices with high breakdown reliability should be achievable after SiC foundries reduce material defects such as micropipes, dislocations, and deep level impurities.

Semiconductor integrated circuit device and manufacturing method thereof

Abstract: In the semiconductor integrated circuit device, a first P + type buried layer formed as an anode region and an N + type diffused region formed in a cathode region are spaced from each other in the direction of the depth. This makes it possible to provide a semiconductor integrated circuit device in which a large depletion layer forming region can be provided in an N type region at a PN junction formed by first and second epitaxial layers and when a reverse bias voltage is applied to a diode element and in which a withstand voltage can be maintained by a depletion layer thus formed to prevent breakdown of elements in the device attributable to a breakdown current.

Bonded semiconductor structure and method of making the same

Abstract: A bonded semiconductor structure static random access memory circuit includes a support substrate which carries a first horizontally oriented transistor, and an interconnect region which includes a conductive line. The memory circuit includes a donor substrate which includes a semiconductor layer stack coupled to a donor substrate body region through a detach region, wherein the semiconductor layer stack is coupled to the interconnect region through a bonding interface, and wherein the semiconductor layer stack includes a pn junction.

Field effect transistor

Abstract: A high-resistant p-silicon layer is formed on a silicon substrate through a silicon oxide film. N-source and n-drain layers are selectively formed in the surface of the high-resistant p-silicon layer. A gate electrode is formed through a gate insulating film on a channel region between the source and drain layers. To induce an n-inverted layer under the gate electrode, a p-base layer is formed in the high-resistant p-silicon layer. A depletion layer extending from a pn junction between the n-drain layer and the high-resistant p-silicon layer reaches the silicon oxide film in a thermal equilibrium state. Part of the high-resistant p-silicon layer extends into a channel region between the drain and base layers. The drain and base layers are connected to each other through part of the depletion layer in the thermal equilibrium state. A field effect transistor having a high-speed operation is provided.

Electroluminescence of a cubic GaN/GaAs (001) p-n junction

Abstract: A cubic GaN p–n diode has been grown on n-type GaAs (001) substrates by plasma assisted molecular epitaxy. For p- and n-type doping, elemental Mg and Si beams have been used, respectively. The optical properties are characterized by photoluminescence at room temperature and 2 K. Current–voltage and capacitance–voltage measurements of the cubic GaN n+–p junction are performed at room temperature. The electroluminescence at 300 K is measured through a semitransparent Au contact. A peak emission at 3.2 eV with a full width at half maximum as narrow as 150 meV is observed, indicating that near-band edge transitions are the dominating recombination processes in our device. A linear increase of the electroluminescence intensity with increasing current density is measured.