Topic
p–n junction
About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.
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TL;DR: In this article, a spin-dependent enhancement of free-carrier capture processes can occur directly at a paramagnetic deep defect without the need for other defects nearby, which is consistent with new experimental results which indicate the absence of any adjacent trapping centers.
Abstract: This paper presents a new model for spin-dependent recombination and generation processes based on the electrical detection of magnetic resonance in semiconductor p - n junction diodes. Based on a modified Shockley-Read recombination statistics, this model differs from those models previously proposed in that the spin-dependent enhancement of free-carrier capture processes can occur directly at a paramagnetic deep defect without the need for other defects nearby. This model incorporates singlet-triplet mechanisms of existing models, but is shown to be consistent with new experimental results which indicate the absence of any adjacent trapping centers.
62 citations
TL;DR: The ability to direct-write arbitrary shapes and patterns of n-doped regions in graphene simply by scanning a laser source should facilitate the exploitation of p-n junctions for a variety of electronic and optoelectronic device applications.
Abstract: Photo-oxidation of spin-cast films of 6,13-bis(triisopropylsilylethynyl) pentacene has been exploited to develop a novel means of spatially modulating doping in graphene. The degree of n-doping of initially p-type graphene can be varied by laser irradiation time or intensity with carrier density change up to ∼7 × 1012 cm–2. This n-doping approach is demonstrated as an effective means of creating p–n junctions in graphene. The ability to direct-write arbitrary shapes and patterns of n-doped regions in graphene simply by scanning a laser source should facilitate the exploitation of p–n junctions for a variety of electronic and optoelectronic device applications.
62 citations
TL;DR: APTES andPFES were used to modify the interface between transferred CVD graphene films and its supporting dielectric to create n-type and p-type graphene, respectively, resulting in thermally stable graphene p-n junctions for temperatures up to 200 °C.
Abstract: 3-Aminopropyltriethoxysilane (APTES) and perfluorooctyltriethoxysilane (PFES) were used to modify the interface between transferred CVD graphene films and its supporting dielectric to create n-type and p-type graphene, respectively. A graphene p–n junction was obtained by patterning both modifiers on the same dielectric and verified through the creation of a field effect transistor (FET). Characteristic I–V curves indicate the presence of two separate Dirac points which confirms an energy separation of neutrality points within the complementary regions. This method minimizes doping-induced defects and results in thermally stable graphene p–n junctions for temperatures up to 200 °C.
62 citations
Book•
01 Jan 1997
TL;DR: In this paper, the SGFramework is used to simulate metal-oxide-semiconductor structures, including PN junction Diodes and junction field effect transistors, and mixed-mode Simulations.
Abstract: 1. Introduction. I. BASICS. 2. Fundamentals of Electromagnetism and its Numerical Analysis. 3. Transport Phenomena and Their Numerical Analysis. II. SEMICONDUCTOR SIMULATION. 4. The Semiconductor Equations. 5. Numerical Solution of PDEs. 6. The SGFramework. III. SEMICONDUCTOR DEVICES. 7. PN Junction Diodes. 8. Bipolar Junction Transistors. 9. Junction Field-Effect Transistors. 10. Metal-Oxide-Semiconductor Structures. 11. Power Semiconductor Devices. IV. ADVANCED TOPICS. 12. Mixed-Mode Simulations. 13. Kinetic Transport Models. 14. Related Work. 15. The SGFramework User's Manual.
61 citations
TL;DR: In this article, the authors proposed a pn-type photodetector with high sensitivity, stable and energy saving and has wide practical application prospect in solar-blind detection systems.
61 citations