Topic
p–n junction
About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.
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TL;DR: In this article, the state-of-the-art performance of diamond Schottky diodes at temperatures of up to 1000 °C, as well as diamond field effect transistors (FETs) with boron delta-doped channels and hydrogen-related surface conductive layers are presented.
Abstract: Over the past few years a variety of diamond electron devices have been fabricated, analysed and simulated. This includes Schottky diodes on boron-doped p+ diamond substrates, boron/nitrogen pn-junction diodes, bipolar transistors based on this pn-junction and field effect transistors (FETs) with boron delta-doped channels and hydrogen-related surface conductive layers. Many of the fabricated devices considered here represent the current state-of-the-art in this field. This includes the operation of diamond Schottky diodes at temperatures of up to 1000 °C, as well as diamond FET devices with a cut-off frequency of 30 GHz and channel current densities of 300 mA mm−1. Simulations show that diamond boron delta-doped FETs might yield an RF-output power density of up to 30 W mm−1.
59 citations
TL;DR: In this article, an electrical model for quantum-well light-emitting diodes (LEDs) with a current-spreading layer was presented, and an empirical diode current equation was sought by matching the extracted I-V curve.
Abstract: We present an electrical model for quantum-well light-emitting diodes (LEDs) with a current-spreading layer. The LEDs studied have a multiquantum well (MQW) between p-GaN and the n-GaN grown on sapphire. The model consists of a diode connected with a series resistor resulting from the combined resistance of the p-n junction, contacts, and current spreader. Based upon this model, the I-V curve of the diode itself without the series resistance is extracted from the measured LED I-V curve. The model also includes an empirical diode current equation which was sought by matching the extracted I-V curve. In the seeking process, junction temperature (T/sub j/) rather than case temperature (T/sub c/) was used in the equation. The diode model allows one to calculate the reduction on conversion efficiency caused by the series resistor. Results show that the current-spreading layer causes 20% of the efficiency reduction at T/sub j/=107/spl deg/C.
59 citations
TL;DR: In this article, the Schottky barrier at the n-CdTe/metal back contact was used for the separation of photo-generated charge carriers, and the potential barrier heights estimated for these devices from the current-voltage characteristics exceed 1.09 eV and 1.13 eV, respectively.
59 citations
TL;DR: In this article, the damaged amorphous layers induced by gallium FIBs with different energies in Si/Si p-n junction cross-sectional specimens were systematically studied.
59 citations
Patent•
26 Mar 1990
TL;DR: In this article, a wafer of neutron transmutation doped silicon having a pn junction between extended opposite surfaces is formed with bevelled edges, and a plurality of reverse biased signal contacts is disposed on one surface to provide an integrated array of avalanche photodiodes.
Abstract: A wafer of neutron transmutation doped silicon having a pn junction between extended opposite surfaces is formed with bevelled edges. A plurality of reverse biased signal contacts is disposed on one surface to provide an integrated array of avalanche photodiodes.
59 citations