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p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.


Papers
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Patent
24 Sep 1990
TL;DR: In this paper, an organic photo film material of negative type and polyisoprene base serving as a passivating layer on the previously etched and metallized front (epitaxy) side is held in place with the help of an adhesion promoting silane compound and covers the entire front side including the portions previously masked with silicon nitride or oxide.
Abstract: Electrochemical etching of silicon wafers or plates, on the front side of which a monocrystalline epitaxy layer is provided having a doping of a type opposite to the doping of the remainder of the silicon plate, so as to provide a pn or np junction, is performed with an organic photo film material of negative type and polyisoprene base serving as a passivating layer on the previously etched and metallized front (epitaxy) side. The film layer is held in place with the help of an adhesion promoting silane compound and covers the entire front side including the portions previously masked with silicon nitride or oxide. It is dried and hardened before exposure to the etchant which is used to etch the rear side of the plate until the etchant reaches the pn junction, where a small voltage bias applied to the junction from the front side assures an etch-stop. Etchants containing tetraalkylammonium hydroxide in water solution or in water-free form are preferred, with various additives as inhibitors, complexing agents and/or wetting agents.

57 citations

Journal ArticleDOI
TL;DR: In this article, a p-type crystalline silicon/porous silicon/micro-crystalline silicon carbon pn junction diodes and demonstrated current-induced visible light emission.
Abstract: We have fabricated p-type crystalline silicon/porous silicon/microcrystalline silicon carbon pn junction diodes and demonstrated current-induced visible light emission. We observed two kinds of electroluminescence; one was a weak white emission at a forward current of about 90 mA, and the other was a strong orange-red one at a forward current from about 200 to 619 mA.

57 citations

Journal ArticleDOI
TL;DR: In this paper, the forward voltage drop at constant forward current was observed for GaAs diffused p−n junction, and it has been observed that the voltage drop varies almost linearly with temperature from 2.0°K to 300°K.
Abstract: It has been observed that the forward voltage drop, at constant forward current, of a GaAs diffused p‐n junction varies almost linearly with temperature from 2.0°K to above 300°K. Since carrier ``freeze‐out'' at low temperatures is not observed, these junctions make excellent cryometers. In addition, these diodes exhibit good repeatability on temperature cycling and an insensitivity to magnetic fields. The sensitivity of the devices measured near room temperature is ΔV/ΔT≈−3.5 mV/°C, If=0.1 μA; ΔV/ΔT≈−2.0 mV/°C, If=1.0 mA. The sensitivity decreases slowly toward lower temperatures and at liquid helium is −1.5 mV/°C and is essentially independent of current. This high and nearly uniform sensitivity over such a wide temperature range is unique among low temperature thermometers. The shape of the temperature‐voltage characteristic, with current as a parameter, is explained quite satisfactorily for T>50°K by assuming that the device conducts primarily recombination‐generation currents, according to the theory...

56 citations

Journal ArticleDOI
TL;DR: In this article, the authors studied the barrier capability of sputter-deposited Mo and reactively sputterdepositing Mo-N layers against Cu diffusion in a device structure of Cu/Mo/p+n junction diodes with a 500 A thick Mo film as barrier layer.

56 citations

Journal ArticleDOI
TL;DR: In this paper, electrostatic doping by buried gates is used to study the electronic and optoelectronic properties of p-n junctions in exfoliated MoS2 flakes.
Abstract: Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS2. In this work, electrostatic doping by buried gates is used to study the electronic and optoelectronic properties of p-n junctions in exfoliated MoS2 flakes. Creating a controllable doping gradient across the device leads to the observation of the photovoltaic effect in monolayer and bilayer MoS2 flakes. For thicker flakes, strong ambipolar conduction enables realization of fully reconfigurable p-n junction diodes with rectifying current-voltage characteristics, and diode ideality factors as low as 1.6. The spectral response of the photovoltaic effect shows signatures of the predicted band gap transitions. For the first excitonic transition, a shift of >4kBT is observed between monolayer and bulk devices, indicating a thickness-dependence of the excitonic coulomb interaction.

56 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202314
202237
2021116
2020166
2019251
2018203