p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.

Ultra-shallow junction formation using silicide as a diffusion source and low thermal budget

Abstract: Ultra-shallow p/sup +//n and n/sup +//p junctions were fabricated using SADS (silicide-as-diffusion-source) and ITS (ion-implantation-through-silicide processing) of 45-nm CoSi/sub 2/ films (3.5 Omega / Square Operator ) using a low thermal budget. The best junctions of either type were made by moderate 10-s RTA (rapid thermal annealing) at 800 degrees C, where the total junction depth, counting the silicide thickness, is believed to be under 60 nm. Diffusion-limited current predominated down to 50 degrees C in junctions made under these conditions. The initial implantation energy had only a minor effect on the junction leakage, where shallower implants required slightly higher temperatures to form low leakage diodes, resulting in diodes which were somewhat more susceptible to shorting during silicide agglomeration at high temperatures. The ITS scheme, where dopant is implanted slightly beyond the silicide, gives an equally low leakage current. Nevertheless, the ITS scheme gives deeper junctions than the SADS process, and it is difficult to control the position of the ITS junction due to silicide/silicon interface fluctuations. >

Electrochemical Formation of a p–n Junction on Thin Film Silicon Deposited in Molten Salt

Abstract: Herein we report the demonstration of electrochemical deposition of silicon p–n junctions all in molten salt. The results show that a dense robust silicon thin film with embedded junction formation can be produced directly from inexpensive silicates/silicon oxide precursors by a two-step electrodeposition process. The fabricated silicon p–n junction exhibits clear diode rectification behavior and photovoltaic effects, indicating promise for application in low-cost silicon thin film solar cells.

Method for diffusing an impurity substance into silicon carbide

Abstract: Impurity ions are accelerated under an irradiation condition of ordinary temperature or relatively low temperature and injected into silicon carbide from its surface. The injected silicon carbide is annealed in a temperature range from 1,600* to 1,200* C. to obtain a PN junction and a luminescent diode based on the PN junction is thereby prepared.

Photodetector and device employing the photodetector for converting an optical signal into an electrical signal

Abstract: An anti-reflective coating having a composite layer of silicon nitride and silicon dioxide may be formed over the entire photosensitive region of the photodetector to minimize the amount of reflection. The composite layer comprises a silicon nitride layer and a dielectric layer contiguous to the silicon nitride layer. The anti-reflective coating may be formed in a CMOS process for fabricating the PN junction in the photodiode and CMOS devices for amplifying the photodetector signal, where the polysilicon gate layer is used as a etch stop. The P+ or N+ material in the PN junction of the photodiode has a distributed design where two portions of the region are separated by a distance in the range of Xd to 2Xd, where Xd is the one-sided junction depletion width, to enhance the electric field and to reduce the distance traveled by the carriers for enhancing bandwidth. A heavily doped region of the opposite type may be added between the two portions to further enhance the electric field. A mask is used to shield a portion of the substrate in which the photodetector region has been or is to be formed when other portions of the substrate region are implanted with a dopant to adjust at least one of the threshold voltages of the other portions. The mask prevents the photodetector region from being affected by such implant.

GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth

Abstract: We introduce GaN∕InGaN light emitting diodes with a dielectric photonic crystal embedded in the epitaxial layer by lateral epitaxial overgrowth on a patterned GaN template. Overgrowth, coalescence, and epitaxial growth of the pn junction within a thickness of 500nm is obtained using metal-organic chemical vapor deposition. This design strongly modifies the distribution of guided modes, as confirmed by angle-resolved measurements. The regime of operation and potential efficiency of such structures are discussed.