p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.

Analyzing Back Contacts of Silicon Solar Cells by Suns-Voc-Measurement at High Illumination Densities

Abstract: This work demonstrates the feasibility and usefulness of a new method to analyse the quality of the rear contact of silicon solar cells separated from other ohmic loss channels as e.g. the resistive loss in the front contact grid. The measurement is based on SunsVoc data at high illumination densities between 1 and 1000 suns. Generally the rear contacts can be described as a Schottky diode with a shunt resistor in parallel. At 1 sun operation conditions the back contact is fully dominated by the shunt showing an ohmic behaviour. However, at high illumination densities the Schottky diode can not be shunted completely anymore resulting in an increasing voltage which is opposed to the pn junction voltage. Finally a reversal point in the SunsVoc characteristics can be observed, i.e. the voltage decreases with increasing illumination density. The evaluation of this characteristic behaviour is used to extract physical parameters like the barrier height of the contact. Additionally the contact quality is assessed for different contact types and base doping concentrations. The predicted contact quality is in good correlation with the measured fill factors of the cells.

Organic solar cell based on multistep charge separation system

Abstract: The p‐n heterojunction organic solar cell composed of n‐type multilayer of two different perylene pigments and p‐type metal‐free phthalocyanine pigment was investigated. A downward potential step of the conduction band in the n‐type multilayer enhanced the photocurrent quantum efficiency by a factor of about 3, owing to the suppression of the charge recombination of photogenerated carriers in the vicinity of the p‐n junction. The multistep charge separation system consisting of energetically well‐arranged organic thin layers was shown to offer an effective system to obtain highly efficient organic solar cells.

PN junction floating gate EEPROM, flash EPROM device and method of manufacture thereof

Abstract: Multi-state EEPROM and Flash EPROM devices with charge control are formed with a P-N junction floating gate with an N type capacitor on top of the channel area and a P type capacitor on top of the field oxide area. An additional mask and a P+/N+ implant instead of POCl 3 doping are required to fabricate this device. The threshold voltage of this device is well controlled by the ratio of C fp , capacitance of the P type capacitor and C fn capacitance of the N type capacitor. The coupling ratio "READ" and "WRITE" are exactly the same as current N type floating gate. The "ERASE" efficiency is improved by 1.5 volt higher voltage to the drain electrode of the EEPROM or the source electrode of a flash EPROM. Also, a good P-N junction floating gate, with reverse junction leakage less than 10 pA for 7 Volt reverse bias, is required to discharge the N type capacitor without affecting the P type capacitor.