Topic
p–n junction
About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.
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TL;DR: The fabrication of a p-n junction diode in a single nanostructure by synthesizing a heterostructure involving n- type AgInS2 and p-type Ag2S and the quasi type-II band alignment between these ternary-binary semiconductors slows down the carrier recombination rate and the heterostructures show rectification behavior.
52 citations
19 Aug 2011
52 citations
TL;DR: In this paper, a new superjunction lateral double diffused MOSFET (LDMOST) was designed with an N-type buried layer in the P-substrate near the drain to suppress the effect of substrate-assisted depletion resulting from the imbalance between the pillars of the super junction layer.
Abstract: A new superjunction lateral double diffused MOSFET (LDMOST) is designed with an N-type buried layer in the P-substrate near the drain to suppress the effect of substrate-assisted depletion resulting from N-type charges' compensating charges' imbalance between the pillars of the superjunction layer. By the effect of the electric field modulation, a more uniform surface electric field is obtained by the new high electric field peak introduced by the p-n junction of the P -substrate and N-type charges' compensation layer. The new effect of reduced bulk field is introduced to improve the vertical breakdown voltage (BV) by reducing the high bulk electric field around the drain. Fabricated N-buried SJ LDMOST with a drift region length of 35 mum and a pillar width of 4.0 mum exhibits a specific on resistance of 98 mOmegamiddotcm2 and a BV of 410 V.
52 citations
TL;DR: In this article, high quality Bi2Te3 and Sb2Te 3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy.
Abstract: High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.
52 citations
TL;DR: In this article, a new type temperature-sensor of pn junction diode and micro-air-bridge heater combined with this one, is proposed and demonstrated, which can cover very wide temperature range of about −200 to 500°C.
Abstract: A new type temperature-sensor of pn junction diode and micro-air-bridge heater combined with this one, are proposed and demonstrated. This pn junction diode temperature-sensor can cover very wide temperature range of about −200 to 500 °C (for about −200 to 150 °C by adjusting the forward bias-voltage; for about 150–500 °C by reverse bias-voltage of about 1 V) with very high sensitivity and accuracy like a NTC thermistor. It is confirmed that the heater combined with this pn junction temperature-sensor formed on the micro-air-bridge of 700 μm ×700 μm has very quick response (thermal time constant of about 16 ms) and very high sensitivity and stability by feedback control.
52 citations