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p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.


Papers
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Journal ArticleDOI
TL;DR: In this article, a simple model of p-n junction is proposed for the understanding of microplasma phenomenon and the effect of impurities on the light-emitting phenomena is discussed briefly in connection with their recent experimental result on the visible light emission from germanium p- n junction.
Abstract: Experimental results on the visible light emission and microplasma phenomena in silicon p – n junction are described. It has been found that the microplasma spot in the p – n junction can be located by scanning small chopped light spot on the junction surface. Combining this method of location of the microplasma spot and the observation by microscope, it is concluded that the light emitting spot does not necessarily coincide with the microplasma spot. Possibility of the effect of impurities on the light-emitting phenomena is discussed briefly in connection with our recent experimental result on the visible light emission from germanium p – n junction. A simple model of p – n junction is proposed for the understanding of microplasma phenomenon.

48 citations

Journal ArticleDOI
TL;DR: In this article, the fabrication of p-n junctions, consisting of a p-type La07Sr03MnO3 (LSMO) and either n-type ZnO grown on sapphire or Si substrates, was reported.
Abstract: The authors report the fabrication of p-n junctions, consisting of p-type La07Sr03MnO3 (LSMO) and either n-type ZnO grown on sapphire or n-type Si substrates The LSMO/ZnO junction exhibits excellent rectifying behavior over the temperature range of 77–300K with breakdown voltage less than −10V LSMO/Si displayed p-n junction characteristics over a temperature region of 77–360K Inserting a SrTiO3 layer between LSMO and Si remarkably improved the junction characteristics All junctions show photocarrier injection effect, illustrating the control of transport properties of LSMO in which electron injection decreases hole concentration following the photoexcitation of both ZnO and Si

48 citations

Journal ArticleDOI
TL;DR: In this paper, the optical losses of homojunction and heterojunction ''close-confinement'' GaAs injection lasers fabricated by liquid phase epitaxy have been described in terms of a simple waveguide model.
Abstract: The optical losses of homojunction and heterojunction ``close‐confinement'' GaAs injection lasers fabricated by liquid phase epitaxy have been described in terms of a simple waveguide model. By introducing an (AlGa) As–GaAs p+‐p heterojunction (ΔEg∼0.1 eV) within ∼2 μ of the p‐n junction, the room‐temperature absorption loss is substantially reduced and the laser efficiency increased. This reduced absorption is due to combination of improved optical waveguiding and reduced absorption in the p+ material adjoining the active region. In addition, the laser gain coefficient can be increased in some cases by the addition of a heterojunction with the degree of improvement depending on the electron diffusion length, width, and doping level of the active region. The increased gain coefficient can contribute substantially to the reduced threshold current density of ``close‐confinement'' lasers at room temperature. However, the relative contributions of reduced laser loss and increased gain coefficient to the impro...

48 citations

Journal ArticleDOI
TL;DR: A self-powered WSe2 photodetector can be fabricated based on this junction, which presents a large photoswitching ratio of 106, high photoresponsivity of 800 mA W-1 and short photoresponse time with long-term stability and reproducibility.
Abstract: Two-dimensional heterojunctions exhibit many unique features in nanoelectronic and optoelectronic devices. However, heterojunction engineering requires a complicated alignment process and some defects are inevitably introduced during material preparation. In this work, a laser scanning technique is used to construct a lateral WSe2 p-n junction. The laser-scanned region shows p-type behavior, and the adjacent region is electrically n-doped with a proper gate voltage. The laser-oxidized product WOx is found to be responsible for this p-type doping. After laser scanning, WSe2 displays a change from ambipolar to unipolar p-type property. A significant photocurrent emerges at the p-n junction. Therefore, a self-powered WSe2 photodetector can be fabricated based on this junction, which presents a large photoswitching ratio of 106, a high photoresponsivity of 800 mA W-1, and a short photoresponse time with long-term stability and reproducibility. Therefore, this selective laser-doping method is prospective in future electronic applications.

48 citations

Patent
Hiroyuki Doi1
23 Oct 2003
TL;DR: In this article, the n-type and p-type doped layers are provided to form two layers in parallel with the substrate surface of the semiconductor substrate, whereby a pn junction formed between the two layers creates a diode structure.
Abstract: A constant voltage device includes n-type and p-type doped layers The n-type doped layer is formed by heavily doping with an n-type impurity an upper portion of a p-type silicon semiconductor substrate, in an active region defined by an isolating insulator film The p-type doped layer is formed by doping the region under the n-type doped layer with a p-type impurity The n-type and p-type doped layers are provided to form two layers in parallel with the substrate surface of the semiconductor substrate, whereby a pn junction formed between the n-type and p-type doped layers creates a diode structure Impurity concentration in the p-type doped layer is established so that the impurity concentration of a portion adjacent the isolating insulator film is lower that that of the rest

48 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202314
202237
2021116
2020166
2019251
2018203