scispace - formally typeset
Search or ask a question
Topic

p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.


Papers
More filters
Journal ArticleDOI
TL;DR: In this article, the radial pn junction configuration formed around the wires significantly reduces the minority carrier collection length along the radial direction, providing outstanding tolerance to material qualities, and the power conversion efficiency has also made huge progress from 12% in less than 10 years.

48 citations

Patent
09 Feb 2001
TL;DR: In this article, a photoelectric converting device is provided with enhanced photoelectric conversion efficiency by optimizing a combination of materials used for top and bottom cells, where the first and second pn junctions are formed in a semiconductor substantially represented by (Al 1−y Ga y ) 1−x In x P, and the second junction is formed in Ga 1−z In z As.
Abstract: A photoelectric converting device is provided with enhanced photoelectric conversion efficiency by optimizing a combination of materials used for top and bottom cells. The photoelectric converting device of the present invention is provided with first and second pn junctions. The first pn junction is formed in a semiconductor substantially represented by (Al 1−y Ga y ) 1−x In x P, and the second pn junction is formed in a semiconductor substantially represented by Ga 1−z In z As.

48 citations

Patent
Kimata Masafumi1
18 Dec 1997
TL;DR: In this article, an infrared solid state image sensing device is characterized by an infrared absorbing section (400) which is formed corresponding to each of pixels arrayed in a two-dimensional manner and adapted for absorbing and transducing incident infrared rays into heat, a temperature detector section (300) arranged on a semiconductor substrate (1) corresponding to pixel arrays constituted by a plurality of serially connected silicon pn junction diodes which are biased in a forward direction.
Abstract: An infrared solid state image sensing device is characterized by an infrared absorbing section (400) which is formed corresponding to each of pixels arrayed in a two-dimensional manner and adapted for absorbing and transducing incident infrared rays into heat, a temperature detector section (300) arranged on a semiconductor substrate (1) corresponding to each of pixel arrays constituted by a plurality of serially connected silicon pn junction diodes which are biased in a forward direction, a cavity section (200) formed in each region on the semiconductor substrate (1) where the temperature detector section (300) is formed, a supporting mechanism (supporting legs 21, 22) constituted with a material of high thermal resistivity for supporting the temperature detector section on the semiconductor substrate above the cavity section, and a junction column (140) for holding the infrared absorbing section (400) away from the temperature detector section (300) and for thermally coupling the infrared absorbing section (400) and the temperature detector section (300). Thus, all manufacturing processes except for removal of a sacrifice layer may be carried out on a silicon VLSI process line, and no active element except for the silicon pn junction diodes for the temperature detector is necessary in the pixel portion. Therefore, an inexpensive infrared image sensing device having improved productivity and high uniformity may be stably manufactured.

48 citations

Journal ArticleDOI
TL;DR: Copper metallization was applied to quarter-micron CMOS circuits using copper chemical vapor deposition (CVD) and chemical mechanical polishing (CMP) as mentioned in this paper, and the electrical characteristics of CMOS devices/circuits were evaluated.
Abstract: Copper metallization was applied to quarter-micron CMOS circuits using copper chemical vapor deposition (CVD) and chemical mechanical polishing (CMP). Both the metallization process and the electrical characteristics of CMOS devices/circuits were evaluated. Process-induced metal contamination on both sides of the wafer were quantitatively evaluated and reduced to about of 10/sup 11/ atoms/cm/sup 2/ by using an optimized cleaning sequence. The ability of borophosphosilicate-glass (BPSG) to act as a copper diffusion barrier was discovered and the ability of TiN to do so was also confirmed. Electrical characteristics of n and p MOSFET's with copper interconnections were stable even after annealing at 550/spl deg/C. The leakage current of the pn junction, capacitance-voltage characteristics and time-dependent dielectric breakdown characteristics of the MOS diode indicate that the copper metallization process did not deteriorate the pn junction and the gate oxide. Normal operation of a 53-stage quarter-micron CMOS inverter ring oscillator with copper metallization was successfully achieved.

48 citations

Journal ArticleDOI
TL;DR: In this article, a thin (∼400 A) LPE In1−xGaxP1−zAsz "trap" on the p-type side of an InP junction is filled by injection to a high enough density to make it possible to observe confined particle states and laser modes in a 70-meV (≳600 A) range.
Abstract: A thin (∼400 A) LPE In1−xGaxP1−zAsz ’’trap’’ on the p‐type side of an InP junction [Eg(InP)−Eg(InGaPAs) ≡ΔE∼245 meV], is filled by injection to a high enough density to make it possible to observe confined‐particle states and laser modes in a 70‐meV (≳600 A) range. The position of the modes is in good agreement with the transition energies expected for a finite potential well.

48 citations


Network Information
Related Topics (5)
Silicon
196K papers, 3M citations
92% related
Thin film
275.5K papers, 4.5M citations
91% related
Band gap
86.8K papers, 2.2M citations
91% related
Photoluminescence
83.4K papers, 1.8M citations
90% related
Quantum dot
76.7K papers, 1.9M citations
88% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202314
202237
2021116
2020166
2019251
2018203