p–n junction

About: p–n junction is a research topic. Over the lifetime, 7701 publications have been published within this topic receiving 108890 citations. The topic is also known as: p-n junction.

Method for producing a pn-junction for a semiconductor device of SiC

Abstract: A method for producing a pn-junction for a semiconductor device of SiC intended to have at least one lateral zone of junction termination with a lower doping concentration of a first conductivity type than a main zone for smearing out the electrical field at said junction comprising at least the step of applying a first layer of SiC over the entire surface and on top of a second layer of SiC. A mask is applied on the first layer over a portion thereof where said main zone and an ohmic contact are to be formed. It is after that etched through the first layer to the second layer while leaving a main zone of said first layer and a contact layer thereof under said mask.

Electrostatically tunable lateral MoTe2 p-n junction for use in high-performance optoelectronics.

Abstract: Because of their ultimate thickness, layered structure and high flexibility, pn junctions based on layered two-dimensional semiconductors have been attracting increasing attention recently. In this study, for the first time, we fabricated lateral pn junctions (LPNJs) based on ultrathin MoTe2 by introducing two separated electrostatic back gates, and investigated their electronic and photovoltaic performance. Pn, np, nn, and pp junctions can be easily realized by modulating the conductive channel type using gate voltages with different polarities. Strong rectification effects were observed in the pn and np junctions and the rectification ratio reached ∼5 × 10(4). Importantly, we find a unique phenomenon that the parameters for MoTe2 LPNJs experience abrupt changes during the transition from p to n or n to p. Furthermore, a high performance photovoltaic device with a filling factor of above 51% and electrical conversion efficiency (η) of around 0.5% is achieved. Our findings are of importance to comprehensively understand the electronic and optoelectronic properties of MoTe2 and may further open up novel electronic and optoelectronic device applications.

Two-dimensional p-n junction under equilibrium conditions

Abstract: For the first time, the idea of a two-dimensional p-n junction formed as a contact between two regions of a quantum-dimensional film with different types of conductivity is proposed. Under equilibrium conditions, the potential distribution and the potential-barrier height were determined. An expression was derived for the width of the surface-charge layer, which depends linearly on the contact potential (external bias) in contrast to the three-dimensional case. The specific capacitance of a two-dimensional p-n junction is virtually independent of the applied potential and depends only on the ambient permittivity. It was shown that, in spite of the fact that the junction electric field is screened only slightly, the Schottky approximation can be used for a description of the properties of such p-n junctions.