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Parasitic capacitance

About: Parasitic capacitance is a research topic. Over the lifetime, 10029 publications have been published within this topic receiving 110331 citations.


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Journal ArticleDOI
H.C. Poon1, H.K. Gummel
01 Dec 1969
TL;DR: In this article, a modified emitter transition layer capacitance representation is given which is free of singularities and allows modeling of the capacitance for voltages up to the "built-in" voltage.
Abstract: A modified emitter transition layer capacitance representation is given which is free of singularities and allows modeling of the capacitance for voltages up to the "built-in" voltage.

45 citations

Journal ArticleDOI
TL;DR: In this article, an active-matrix organic light-emitting diode (AMOLED) displays with amorphous silicon (a-Si) thin-film transistors (TFTs) are used to compensate for the effect of shift in the threshold voltage (V T) of a-Si TFTs on the OLED current.
Abstract: This paper presents a method of driving active-matrix organic light-emitting diode (AMOLED) displays with amorphous silicon (a-Si) thin-film transistors (TFTs). By using current feedback, the method effectively compensates for the effect of shift in the threshold voltage (V T) of a-Si TFTs on the OLED current. A CMOS transresistance amplifier is used as the column driver to cancel the effect of large parasitic capacitance of data lines. An accelerating pulse is used at the start of the programming cycle to improve the settling at low currents. A detailed analysis has been done to investigate the effect of circuit components on the sensitivity of the OLED current to V T shift and the settling behavior of the circuit. Prototypes of pixel circuits and the transresistance amplifier were fabricated in an a-Si TFT process and a 0.8- mum 20-V CMOS technology, respectively. Measurements show less than 5% change in the OLED current for 2.5-V shift in V T of TFTs. Settling times smaller than 50 mus were achieved for parasitic capacitances of 50-200 pF and programming currents as small as 200 nA.

45 citations

Journal ArticleDOI
TL;DR: In this paper, a single-chip integrated interface for wide-range resistive gas sensors is presented, which can reveal more than five decades of resistance variation (about 1% of relative error in the range 470kΩ-50GΩ) and, at the same time, estimate the sensor parasitic capacitance (about 0.3pF of estimation error in range 0-33pF).
Abstract: In this work, we present novel experimental results on a single-chip integrated interface for wide-range resistive gas sensors. The proposed circuit has been proved to be able to reveal more than five decades of resistance variation (about 1% of relative error in the range 470 kΩ–50 GΩ) and, at the same time, to estimate the sensor parasitic capacitance (about 0.3 pF of estimation error in the range 0–33 pF). The fabricated integrated circuit has shown good performances in a wide range of environmental temperature (from −20 °C to 80 °C). The suitability for sensor applications has been proved by interfacing a high-value resistance MOX sensor and monitoring both the resistance and the parasitic capacitance values during a fast thermal transient of the sensor. Moreover, the front-end has been utilized, as an example, for the detection of hydrogen by means of a Figaro TGS 2600 sensor. An on/off modulation has been applied during the fluxing of two gas mixtures, constituted by both hydrogen and nitrogen, with a hydrogen concentration of 40 ppm and 80 ppm, respectively. Compared to other solutions presented in the literature, the implementation and fabrication as integrated circuit in a standard CMOS technology allows the whole interface to be considered as a simple and low-cost solution for wide-range resistive sensor arrays.

45 citations

Proceedings ArticleDOI
07 May 1990
TL;DR: In this article, a high power 2-18-GHz T/R (transmit/receive) switch monolithic microwave IC (MMIC) has been developed for use in broadband transceivers.
Abstract: A high-power 2-18-GHz T/R (transmit/receive) switch monolithic microwave IC (MMIC) has been developed for use in broadband T/R modules. This switch has a power handling of better than 35 dBm (3.2 W), 8-dB higher than any previously reported broadband switch. A combination of techniques was used to yield higher power handling while preserving low loss and high isolation. These circuit techniques include an asymmetrical design of the transmit and receive arms, the use of dual-gate FETs for handling large voltages, and the use of large FET peripheries for handling large currents. The use of dual-gate FETs in place of a stack of individual FETs reduces the device area, with a resulting reduction in parasitic series inductance through the FET and in shunt capacitance from the FET to ground. Power handling is somewhat lower for the dual-gate FET than for conventional stacked FETs, since RF voltage cannot be distributed as uniformly across the gates. Offstate capacitance is higher for a dual-gate FET than for a stacked FET, since the close proximity of the elements leads to additional parasitic capacitances. >

45 citations

Patent
02 Nov 1981
TL;DR: In this article, a circuit and method for measuring the capacitance of a circuit element is presented, where a reference capacitor, a voltage source, and a switching circuit are arranged such that the circuit element and the reference capacitor are alternately charged and discharged from the voltage source at the same frequency.
Abstract: A circuit and method for measuring the capacitance of a circuit element. A reference capacitor, a voltage source, and a switching circuit are arranged such that the circuit element and the reference capacitor are alternately charged and discharged from the voltage source at the same frequency, the charging of the circuit element being synchronized with either the charging or the discharging of the reference capacitor. Currents of the circuit element and the reference capacitor, for example the discharge currents, are supplied to a reservoir capacitor circuit and compared to provide a measure of the difference between the capacitances of the circuit element and the reference capacitor. The comparison is made by monitoring the feedback current necessary to maintain the charge of the reservoir capacitor circuit substantially constant.

45 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202364
2022156
2021179
2020344
2019380
2018382