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Parasitic capacitance

About: Parasitic capacitance is a research topic. Over the lifetime, 10029 publications have been published within this topic receiving 110331 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, a drain feedback based on the characteristics of the gate-to-drain junction of the input FET is proposed to restore the charge required at the input of the preamplifier.
Abstract: This paper describes a novel technique of charge restoration - the drain feedback, based on the characteristics of the gate-to-drain junction of the input FET. The restoration charge required at the input of the preamplifier is generated by impact ionization in high-field regions of the FET. Actually the feedback is obtained by regulating the drain voltage according to the input energy count-rate product and consequently adjusting the electric field for the necessary charge generation. In the first part of the paper the principles of impact ionization in semiconductors at cryogenic temperatures are outlined and applied to junction FET's (JFET's) under saturation conditions. Then, the properties of FET gate leakage current generated by impact ionization are analyzed. Finally, the continuous mode of operation of the new feedback method is presented, and results from its application in x-ray spectroscopy with silicon and germanium detectors are given. Superior noise and count-rate performance coupled with simplicity and reliability are the outstanding features of the drain feedback method. It is the first feedback method in which the cryogenic input stage comprises the detector and the FET without the parasitic increases of stray capacitance or light-induced leakage currents characteristic of the other resistorless configurations.

45 citations

Patent
21 Jul 1988
TL;DR: In this paper, a dielectric substrate is encapsulated by a resin coating, which includes a magnetic material, such as high frequency ferrite powder, to increase the inductance of the LC filter and to reduce the stray capacitance of the filter.
Abstract: An LC filter device includes a dielectric substrate having opposing sets of coil electrode patterns and capacitor electrode patterns. Each set of coil electrode patterns forms an inductive element, and each set of capacitor electrode patterns forms a capacitive element. The inductive and capacitive elements are interconnected to form an LC circuit configuration. The dielectric substrate is encapsulated by a resin coating. The resin coating includes a magnetic material, such as a high frequency ferrite powder, to increase the inductance of the LC filter and to reduce the stray capacitance of the LC filter.

45 citations

Proceedings ArticleDOI
01 Jun 1989
TL;DR: An accurate and efficient method for extraction of parasitic capacitances in submicron integrated circuits using a 3-D finite element model in which the conductor charges are approximated by a piece-wise linear function on a web of edges located on the surface of the conductors.
Abstract: We present an accurate and efficient method for extraction of parasitic capacitances in submicron integrated circuits. The method uses a 3-D finite element model in which the conductor charges are approximated by a piece-wise linear function on a web of edges located on the surface of the conductors. This yields a system of Green's function integral equations that is solved by a novel approximate matrix inversion technique that only utilizes the entries corresponding to pairs of finite elements that are physically close to each other. With N representing the size of the layout, this results in time and space complexities of O(N) and O(PIN) respectively. The method has been implemented in an efficient layout to circuit extractor and experimental results are presented.

45 citations

Journal ArticleDOI
TL;DR: In this paper, a simple analytical model for a touch mode capacitive pressure sensor (TMCPS) is presented, which is able to evaluate the main features of a TMCPS such as: sensitivity, touch point pressure and parasitic capacitance.
Abstract: Due to an increasing need for devices with low power consumption, capacitive pressure sensors have become good substitutes for the well known piezoresistive pressure sensors. Mathematical models are necessary to design and characterize the device, preferably the model is analytical such that geometrical scalings are revealed. We show that, in the case of linear elastic behavior, a simple analytical model can be found for a touch mode capacitive pressure sensor (TMCPS). With this model it is possible to readily evaluate the main features of a TMCPS such as: sensitivity (both in normal and touch mode), touch point pressure and parasitic capacitance. Therefore, the desired device can be designed without using finite element modeling (FEM). This reduces the effort needed to design a micromachined TMCPS. Finally, the model has been compared with a micromachined TMCPS showing an excellent agreement with the experimental data.

45 citations

Journal ArticleDOI
TL;DR: In this article, a compact vibration-driven electret generator was developed to operate a wireless sensor module without an external power source, which was necessary for enabling this operation to enhance the power output of the generator.
Abstract: We developed a compact vibration-driven electret generator that excelled at a power output. It succeeded in the operation of wireless sensor modules only on electricity from electret generators. This electret generator can supply enough power to operate a wireless sensor module without an external power source. It was necessary for enabling this operation to enhance the power output of the electret generator. We enhanced the power output by decreasing the parasitic capacitance. To decrease the parasitic capacitance, we fabricated a collector substrate using concave electrodes. We decreased it from 25 to 17 pF. As a result, the power output from our generator was enhanced from 40 to 100 µW considerably at an acceleration of 0.15 g (1.47 m s−2) and a resonance frequency of 30 Hz.

45 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202364
2022156
2021179
2020344
2019380
2018382