Topic
Parasitic capacitance
About: Parasitic capacitance is a research topic. Over the lifetime, 10029 publications have been published within this topic receiving 110331 citations.
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TL;DR: In this article, the authors describe modifications to the recently demonstrated vapour phase-transported laser structure to reduce the parasitic capacitance by an order of magnitude, and increase the 3 dB bandwidth for CW 1.52 μm lasers to 8 GHz.
Abstract: We describe modifications to the recently demonstrated vapour-phase-transported laser structure to reduce the parasitic capacitance by an order of magnitude, and increase the 3 dB bandwidth for CW 1.52 μm lasers to 8 GHz. The parasitic and nonlinear limitations to this bandwidth are discussed.
40 citations
Patent•
08 Feb 1994TL;DR: In this article, a circuit for monitoring the power of a transmitter amplifier was proposed, where the detected DC voltage level corresponding to the output power is compressed at high output levels by using as the coupling capacitance a capacitance diode such that the capacitance of this component, and thereby the tightness of the coupling, diminishes as the detected voltage level increases.
Abstract: The object of the invention is a circuit for monitoring the power of a transmitter amplifier. In the solution according to the invention, the detected DC voltage level (Vdet) corresponding to the output power is compressed at high output levels by using as the coupling capacitance a capacitance diode (7) such that the capacitance of this component, and thereby the tightness of the coupling, diminishes as the detected voltage level increases. The invention can be employed, for example, in the power control of a mobile phone's transmitter.
40 citations
16 Jun 2005
TL;DR: In this paper, the frequency dependent characteristics of a gapped toroidal structure are extracted empirically over a bandwidth that exceeds 30 MHz, due to non-linear flux distributions, magnetic properties of the core material, leakage inductance, stray capacitances and eddy currents in the windings.
Abstract: The frequency dependent characteristics of a gapped toroidal structure are extracted empirically over a bandwidth that exceeds 30 MHz. The analysis is complicated due to non-linear flux distributions, magnetic properties of the core material, leakage inductance, stray capacitances and eddy currents in the windings. A permeance model of the core is implemented to model the magnetic circuit. The model includes a linear lumped element equivalent circuit to approximate the non-linear complex permeability of the core, which was measured empirically. Stray capacitance and inductance of the winding are also modeled. A gyrator is used to couple the electric and magnetic models for circuit simulation. The measured and simulated results of open-circuit impedance from the secondary winding and the transimpedance gain (V/A) of the current sensor are compared and discussed
40 citations
Patent•
29 Aug 2011
TL;DR: In this article, the electrical potential of conductive structures proximate capacitive touch pads of the sensing device is altered to compensate for the effect of parasitic capacitance, based on external conditions such as water on the touch screen or an intervening user worn glove.
Abstract: Methods and apparatus for improving the sensing performance of a capacitive touch screen sensing device. The electrical potential of conductive structures proximate capacitive touch pads of the sensing device is altered to compensate for the effect of parasitic capacitance, based on external conditions such as water on the touch screen or an intervening user worn glove. The compensation for parasitic capacitance improves the signal to noise ratio and therefore the sensing performance of the device.
40 citations
TL;DR: In this paper, a 10-kV SiC junction barrier Schottky (JBS) diode prototype made by Cree was characterized and the rectifier operation was analyzed in consideration of the impact of the JBS diode parasitic capacitance.
Abstract: The superior material properties of the wide bandgap silicon carbide (SiC) semiconductors enable excellent device characteristics such as low on-resistance, high breakdown voltage, fast switching speed, high temperature operation, etc. 10-kV SiC junction barrier Schottky (JBS) diode prototype made by Cree was characterized in this paper first. The high-voltage (HV) and high-frequency rectifier consisting of SiC JBS diodes in dc-dc converters can potentially benefit from the device characteristics. However, capacitive current in both forward and reverse recovery process is observed due to the junction capacitance when the SiC JBS diode is turned on and off, which increases the reactive power and reduces the rectifier output power and voltage. To better utilize the devices, the rectifier operation is analyzed in consideration of the impact of the JBS diode parasitic capacitance. Two equivalent circuit models, the series and the parallel input impedance model, are proposed. The distributed junction capacitance of JBS diodes is lumped into the equivalent input capacitance such that the input impedance and output voltage, two critical parameters in HV dc-dc converter design, can be predicted from the models. Experiment setup of SiC JBS diode rectifier was built and the test results verified the modeling work.
40 citations