Parasitic capacitance

About: Parasitic capacitance is a research topic. Over the lifetime, 10029 publications have been published within this topic receiving 110331 citations.

Power efficient charge pump in deep submicron standard CMOS technology

Abstract: A power efficient charge pump is proposed. The use of low voltage transistors and of a simple 2-phase clocking scheme allows the use of higher frequencies compared to conventional solutions, thus obtaining high current, high efficiency and small area. Measurements show good results for frequencies around 100MHz. Two testpatterns have been fabricated, one with three stages and one with five stages, in a 1.8V 0.18micro;m standard CMOS digital process (6 metals) with triple well. High voltage capacitors have been implemented using metal to metal parasitic capacitance.

Active matrix type display device and its driving method

Abstract: PROBLEM TO BE SOLVED: To reduce display irregularity due to dullness in current waveforms caused by a stray capacitance of a source signal line of a current driven active matrix type display device. SOLUTION: The value of a current which flows in the source signal line is increased in order to make electric charges accumulated in stray capacitance correspond to display gradation quickly. To accomplish the above, the channel size of a driving transistor of each pixel is changed for a case in which the transistor is connected to the source signal line and for a case in which the transistor is connected to a display element. For example, the current value which is to be applied to the source signal line is made ten times larger in a two type panel so that driving is conducted in a 75 μ second horizontal scanning interval even though the stray capacitance of the source signal line is twenty-five pF. Moreover, a gradation vs. luminance characteristic is improved by using the fact that the time required for the change is different for every gradation.

Modification of the Maxwell–Wien Bridge for Accurate Measurement of a Process Variable by an Inductive Transducer

Abstract: The small inductance of an inductive transducer generally linearly changes with a process variable, but their measurement by the usual inductive bridge circuit like the Maxwell bridge, the Maxwell-Wien Bridge, the Hay bridge, etc., suffers from errors due to the effect of the stray capacitance between bridge nodal points and the ground and the stray inductance on the inductive coil, respectively. The conventional Wagner-Earth technique is not suitable for continuous measurement. In this paper, a modified operational-amplifier-based Maxwell-Wien bridge measurement technique has been proposed in which the effect of stray capacitance and inductance is minimized. In the first phase of the experiment, the bridge performance has been studied with a known variable inductor, and in the second phase, the same experimentation was done by replacing the variable inductor with an inductive coil having an adjustable core position for the measurement of displacement. The linear characteristics over a wide range of displacement with good repeatability, linearity, and variable sensitivity have been described.

Class E full-wave low dv/dt rectifier

Abstract: An analysis and experimental verification for a Class E full-wave current-driven low dv/dt rectifier are given. Basic parameters of the circuit are derived using the time-domain analysis and Fourier series techniques. The rectifier diodes turn on and off at low dv/dt, yielding low switching noise and low switching losses. Diode parasitic capacitances do not adversely affect the circuit operation. The absolute value of di/dt is limited at diode turn-off, significantly reducing the reverse recovery current. The rectifier input voltage waveform differs only slightly from an ideal sinusoid, resulting in a low total harmonic distortion. The circuit has theoretically zero-ripple voltage and, therefore, zero loss in the equivalent series resistance (ESR) of the filter capacitor. The Class E full-wave topology has lower diode conduction loss than the Class E half-wave rectifier. The efficiency is almost constant over the load range from 10% to 100% of the full load. The rectifier offers high-power density and high-frequency rectification and is suitable for low-voltage and high-current applications, as shown by experimental results given for a 75-W rectifier which was operated at 1 MHz with an output of 5 V and 15 A. The theoretical and experimental results were in good agreement. >

A 2.1 MHz Crystal Oscillator Time Base with a Current Consumption under 500 nA

Abstract: A micro-power circuit is encapsulated with a 2.1 MHz ZT-cut quartz in a vacuum package. The oscillator core has 2 complementary active MOSFETS and amplitude stabilization. New coupling and biasing circuits, and dynamic frequency dividers allow to achieve ±2 ppm frequency stability down to 1.8 V with a current under 0.5 ?A.